MMBTH81
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Case/Package | SOT-23 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 20 V |
| Collector Emitter Breakdown Voltage | 20 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Collector Emitter Voltage (VCEO) | 20 V |
| Contact Plating | Tin |
| Continuous Collector Current | 50 mA |
| Current Rating | -50 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 3 V |
| Frequency | 600 MHz |
| Gain Bandwidth Product | 600 MHz |
| Height | 1.11 mm |
| hFE Min | 60 |
| Introduction Date | 1989-01-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Breakdown Voltage | 20 V |
| Max Collector Current | 50 mA |
| Max Frequency | 600 MHz |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 350 mW |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 225 mW |
| Radiation Hardening | No |
| REACH SVHC | Unaffected |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85 |
| Transition Frequency | 600 MHz |
| Voltage Rating (DC) | -20 V |
| Weight | 30 mg |
| Width | 1.3 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
