BAV99WT1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Average Rectified Current | 200 mA |
| Capacitance | 1.5 pF |
| Case/Package | SOT-323 |
| Contact Plating | Tin |
| Current Rating | 215 mA |
| Element Configuration | Common Cathode |
| Forward Current | 215 mA |
| Forward Voltage | 1 V |
| Height | 1 mm |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Forward Surge Current (Ifsm) | 500 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Repetitive Reverse Voltage (Vrrm) | 100 V |
| Max Reverse Leakage Current | 2.4 µA |
| Max Reverse Voltage (DC) | 70 V |
| Max Surge Current | 2 A |
| Min Operating Temperature | -65 °C |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 2 A |
| Peak Reverse Current | 1 µA |
| Power Dissipation | 300 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Recovery Time | 6 ns |
| Reverse Recovery Time | 6 ns |
| Reverse Voltage | 100 V |
| Schedule B | 8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85 |
| Termination | SMD/SMT |
| Voltage Rating (DC) | 70 V |
| Weight | 30 mg |
| Width | 1.35 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
