BAS70-04LT1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Average Rectified Current | 100 mA |
| Breakdown Voltage | 70 V |
| Capacitance | 2 pF |
| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Contact Plating | Tin |
| Current Rating | 2 µA |
| Element Configuration | Dual |
| Forward Current | 15 mA |
| Forward Voltage | 410 mV |
| Halogen Free | Halogen Free |
| Height | 1.016 mm |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Forward Surge Current (Ifsm) | 600 mA |
| Max Operating Temperature | 150 °C |
| Max Output Current | 70 mA |
| Max Power Dissipation | 225 mW |
| Max Repetitive Reverse Voltage (Vrrm) | 70 V |
| Max Reverse Leakage Current | 10 µA |
| Max Reverse Voltage (DC) | 70 V |
| Max Surge Current | 100 mA |
| Min Operating Temperature | -50 °C |
| Number of Elements | 2 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 100 mA |
| Peak Reverse Current | 10 µA |
| Power Dissipation | 225 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Standoff Voltage | 70 V |
| Schedule B | 8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85 |
| Width | 1.397 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
