CSD86330Q3D
Texas Instruments
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
| Power - Max | 6W |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 6.2nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-LSON (3.3x3.3) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
