NSBC114EDXV6T1G
ON SEMICONDUCTOR
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Case/Package | SOT-563-6 |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 500 mW |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 357 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85 |
| Voltage Rating (DC) | 50 V |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
