US6M11TR
ROHM
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Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 20V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A, 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 1.8nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | TUMT6 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 6,000
MOQ:10
SPQ:10
| Quantity | Unit Price | |
|---|---|---|
| 10 - 99 | $0.471 | |
| 100 - 499 | $0.44 | |
| 500 - 999 | $0.41 | |
| 1,000 - 2,999 | $0.38 | |
| 3,000 - 5,999 | $0.311 | |
| 6,000 - 14,999 | $0.288 | |
| 15,000 - | $0.25 | |
| - | - | |
