RF4G060ATTCR

RF4G060ATTCR_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)40V
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds6A (Ta)
Power Dissipation (Max)880 pF @ 20 V
Rds On (Max) @ Id, Vgs2W (Ta)
Vgs(th) (Max) @ Id40mOhms @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs2.5V @ 1mA
Vgs (Max)17.2 nC @ 10 V
Operating Temperature Range±20V
Applications150°C (TJ)
Device PackageSurface Mount
Technology22 nC @ 10 V

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 6,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.304
100 - 499 $0.281
500 - 999 $0.266
1,000 - 2,999 $0.243
3,000 - 5,999 $0.205
6,000 - 14,999 $0.19
15,000 - $0.159
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