R8008ANJGTL

R8008ANJGTL_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)800V
Current - Continuous Drain (Id) @ 25°C10 V
Input Capacitance (Ciss) (Max) @ Vds8A (Tc)
Power Dissipation (Max)1100 pF @ 25 V
Rds On (Max) @ Id, Vgs150°C (TJ)
Vgs(th) (Max) @ Id1.03Ohm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs5V @ 1mA
Vgs (Max)38 nC @ 10 V
Operating Temperature Range±30V
Applications150°C (TJ)
Device PackageSurface Mount
TechnologyTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 1,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 49 $3.548
50 - 99 $3.312
100 - 499 $3.077
500 - 999 $2.834
1,000 - 1,999 $2.363
2,000 - 4,999 $2.188
5,000 - 9,999 $1.892
10,000 - $1.77