R6007ENXC7G

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)600V
Current - Continuous Drain (Id) @ 25°C10 V
Input Capacitance (Ciss) (Max) @ Vds7A (Ta)
Power Dissipation (Max)390 pF @ 25 V
Rds On (Max) @ Id, Vgs150°C (TJ)
Vgs(th) (Max) @ Id620mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs4V @ 1mA
Vgs (Max)20 nC @ 10 V
Operating Temperature Range±20V
Applications150°C (TJ)
Device PackageThrough Hole
TechnologyTO-220-3 Full Pack

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 1,050

MOQ:50

SPQ:50

Quantity

Unit Price Total
QuantityUnit Price
50 - 99 $1.694
100 - 499 $1.573
500 - 999 $1.451
1,000 - 1,999 $1.208
2,000 - 4,999 $1.117
5,000 - 9,999 $0.965
10,000 - $0.904
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