IRF3710ZPBF
INFINEON
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFET® |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 59A(Tc) |
| Power Dissipation (Max) | 2900 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | -55°C ~ 150°C (TJ) |
| Vgs(th) (Max) @ Id | 18mOhms @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| Vgs (Max) | 120 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 175°C (TJ) |
| Device Package | Through Hole |
| Technology | TO-220AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 26,650
MOQ:1,000
SPQ:1,000
| Quantity | Unit Price | |
|---|---|---|
| 1,000 - 1,999 | $1.397 | |
| 2,000 - 2,999 | $1.315 | |
| 3,000 - 5,999 | $1.234 | |
| 6,000 - 8,999 | $1.114 | |
| 9,000 - | $1.074 | |
| - | - | |
| - | - | |
| - | - | |
