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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Device Package	Technology
質量保證 B-1	來自供應商的訂海外位置	IRF5803TRPBF INFINEON	34,109	22+		預計 16個工作天	End of Life 核友型號：st49404356	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	2,357			預計 11個工作天	核友型號：st75141196	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5806TRPBF INFINEON	1,035			預計 11個工作天	核友型號：st75141197	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 4.5V	4A (Ta)	594 pF @ 15 V	2W (Ta)	86mOhms @ 4A, 4.5V	1.2V @ 250µA	11.4 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF60DM206 INFINEON	32			預計 11個工作天	核友型號：st75141198	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	130A(Tc)	6530 pF @ 25 V	150°C (TJ)	2.9mOhms @ 80A, 10V	3.7V @ 150µA	200 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric ME
質量保證 B-1	來自供應商的訂	IRF60SC241ARMA1 INFINEON	200			預計 11個工作天	核友型號：st75141199	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	360A(Tc)	16000 pF @ 30 V	2.4W(Ta), 417W(Tc)	1.3mOhms @ 100A, 10V	3.7V @ 250µA	388 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	74	1027		預計 11個工作天	核友型號：st65417924	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10 V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	30	24+		預計 11個工作天	核友型號：st75024895	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10 V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	22			預計 11個工作天	核友型號：st75141200	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10 V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF6215PBF INTERNATIONAL RECTIFIER	30			預計 11個工作天	核友型號：st65359218	INTERNATIONAL RECTIFIER	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10 V	13A (Tc)	860 pF @ 25 V	110W (Tc)	290mOhms @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF6216TRPBF INFINEON	45			預計 11個工作天	核友型號：st75141201	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10 V	2.2A (Ta)	1280 pF @ 25 V	2.5W (Ta)	240mOhms @ 1.3A, 10V	5V @ 250µA	49 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF6216TRPBF-1 INFINEON	7,714			預計 8個工作天	核友型號：st73307670	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10 V	2.2A (Ta)	1280 pF @ 25 V	2.5W (Ta)	240mOhms @ 1.3A, 10V	5V @ 250µA	49 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRF6218PBF INFINEON	1,000	21+		預計 8個工作天	核友型號：st70572728	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10 V	27A (Tc)	2210 pF @ 25 V	250W(Tc)	150mOhms @ 16A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON	10,000	20+		預計 11個工作天	核友型號：st71361756	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF630NPBF INFINEON	10,000	22/24+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76369600	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF630NPBF INFINEON	29,111	25+		預計 16個工作天	End of Life 核友型號：st49404366	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON	776			預計 11個工作天	核友型號：st75141203	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF630NPBF INFINEON TECHNOLOGIES	238,397	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681674	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647278	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NSTRLPBF INFINEON	16			預計 11個工作天	核友型號：st75141204	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF630NSTRLPBF INFINEON TECHNOLOGIES	800	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681675	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF640NPBF INFINEON	1,066	22/23+	MOQ : 1,066 SPQ : 1	預計 11個工作天	核友型號：st76389985	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON	50,000	20+		預計 11個工作天	核友型號：st71361757	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF640NPBF INFINEON	83,600	22+		預計 16個工作天	核友型號：st49404367	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON	16			預計 11個工作天	核友型號：st75141206	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON TECHNOLOGIES	1,780	22+		預計 11個工作天	核友型號：st75028691	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF640NPBF INFINEON TECHNOLOGIES	293,600	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681676	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NSTRLPBF INFINEON	2,400	21+		預計 11個工作天	核友型號：st71361758	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF640NSTRLPBF INFINEON	16,000	25+		預計 16個工作天	核友型號：st49404369	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF640NSTRLPBF INFINEON	688			預計 11個工作天	核友型號：st75141207	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF640NSTRLPBF INFINEON TECHNOLOGIES	121,600	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681677	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF640NSTRLPBF INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st72742471	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF6613TRPBF INFINEON	25			預計 11個工作天	核友型號：st75141210	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	23A(TA), 150A(Tc)	5950 pF @ 15 V	2.8W(Ta), 89W(Tc)	3.4mOhms @ 23A, 10V	2.25V @ 250µA	63 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MT
質量保證 B-2	來自供應商的訂	IRF6614TRPBF INFINEON	13,111	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76528929	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	12.7A(TA), 55A(Tc)	2560 pF @ 20 V	2.1W(Ta), 42W(Tc)	8.3mOhms @ 12.7A, 10V	2.25V @ 250µA	29 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST
質量保證 B-1	來自供應商的訂	IRF6616TRPBF INFINEON	5			預計 11個工作天	核友型號：st75141211	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	19A(TA), 106A(Tc)	3765 pF @ 20 V	2.8W(Ta), 89W(Tc)	5mOhms @ 19A, 10V	2.25V @ 250µA	44 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MX
質量保證 B-1	來自供應商的訂	IRF6617TRPBF INFINEON	287			預計 11個工作天	核友型號：st75141212	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	14A(TA), 55A(Tc)	1300 pF @ 15 V	2.1W(Ta), 42W(Tc)	8.1mOhms @ 15A, 10V	2.35V @ 250µA	17 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST
質量保證 B-1	來自供應商的訂	IRF6618TRPBF INFINEON	8			預計 11個工作天	核友型號：st75141213	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	30A(TA), 170A(Tc)	5640 pF @ 15 V	2.8W(Ta), 89W(Tc)	2.2mOhm @ 30A, 10V	2.35V @ 250µA	65 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT
質量保證 B-1	來自供應商的訂	IRF6620TRPBF INFINEON	98			預計 11個工作天	核友型號：st75141214	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	4.5V, 10V	27A(TA), 150A(Tc)	4130 pF @ 10 V	2.8W(Ta), 89W(Tc)	2.7mOhms @ 27A, 10V	2.45V @ 250µA	42 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MX
質量保證 B-2	來自供應商的訂	IRF6623TRPBF INFINEON	4,792	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76520993	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	4.5V, 10V	16A(TA), 55A(Tc)	1360 pF @ 10 V	1.4W(Ta), 42W(Tc)	5.7mOhms @ 15A, 10V	2.2V @ 250µA	17 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST
質量保證 B-2	來自供應商的訂	IRF6643TRPBF INFINEON	10,262	15+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76424295	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	6.2A(TA), 35A(Tc)	2340 pF @ 25 V	2.8W(Ta), 89W(Tc)	34.5mOhms @ 7.6A, 10V	4.9V @ 150µA	55 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ
質量保證 B-1	來自供應商的訂	IRF6644TRPBF INFINEON	1			預計 11個工作天	核友型號：st75141215	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	10.3A(TA), 60A(Tc)	2210 pF @ 25 V	2.8W(Ta), 89W(Tc)	13mOhms @ 10.3A, 10V	4.8V @ 150µA	47 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN
質量保證 B-1	來自供應商的訂	IRF6645TRPBF INFINEON	5,449	23+		預計 16個工作天	核友型號：st76078865	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	5.7A(TA), 25A(Tc)	890 pF @ 25 V	2.2W(Ta), 42W(Tc)	35mOhms @ 5.7A, 10V	4.9V @ 50µA	20 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SJ
質量保證 B-2	來自供應商的訂	IRF6645TRPBF INFINEON	8,604	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76469870	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	5.7A(TA), 25A(Tc)	890 pF @ 25 V	2.2W(Ta), 42W(Tc)	35mOhms @ 5.7A, 10V	4.9V @ 50µA	20 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SJ
質量保證 B-1	來自供應商的訂	IRF6645TRPBF INFINEON	32			預計 11個工作天	核友型號：st75141216	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	5.7A(TA), 25A(Tc)	890 pF @ 25 V	2.2W(Ta), 42W(Tc)	35mOhms @ 5.7A, 10V	4.9V @ 50µA	20 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SJ
質量保證 B-1	來自供應商的訂	IRF6646TRPBF INFINEON	4,770	16+		預計 11個工作天	核友型號：st71361759	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	80V	10 V	12A(TA), 68A(Tc)	2060 pF @ 25 V	2.8W(Ta), 89W(Tc)	9.5mOhms @ 12A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MN
質量保證 B-2	來自供應商的訂	IRF6646TRPBF INFINEON	4,533	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76511629	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	80V	10 V	12A(TA), 68A(Tc)	2060 pF @ 25 V	2.8W(Ta), 89W(Tc)	9.5mOhms @ 12A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MN
質量保證 B-1	來自供應商的訂	IRF6648TRPBF INFINEON	2,000	17+		預計 11個工作天	核友型號：st71361760	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	86A (Tc)	2120 pF @ 25 V	2.8W(Ta), 89W(Tc)	7mOhms @ 17A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN
質量保證 B-1	來自供應商的訂	IRF6648TRPBF INFINEON	1,725			預計 8個工作天	核友型號：st73307671	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	86A (Tc)	2120 pF @ 25 V	2.8W(Ta), 89W(Tc)	7mOhms @ 17A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN
質量保證 B-1	來自供應商的訂	IRF6648TRPBF INFINEON	7			預計 11個工作天	核友型號：st75141217	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	86A (Tc)	2120 pF @ 25 V	2.8W(Ta), 89W(Tc)	7mOhms @ 17A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN
質量保證 B-2	來自供應商的訂	IRF6662TRPBF INFINEON	14,400	18+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76483513	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	8.3A(TA), 47A(Tc)	1360 pF @ 25 V	2.8W(Ta), 89W(Tc)	22mOhms @ 8.2A, 10V	4.9V @ 100µA	31 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MZ
質量保證 B-1	來自供應商的訂	IRF6662TRPBF INFINEON	385			預計 11個工作天	核友型號：st75141218	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	8.3A(TA), 47A(Tc)	1360 pF @ 25 V	2.8W(Ta), 89W(Tc)	22mOhms @ 8.2A, 10V	4.9V @ 100µA	31 nC @ 10 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MZ