Semiconductors-Discrete semiconductors-FETs | CoreStaff ONLINE

日本半導體・電子部品零件・模組產品的購物網站

Language: 繁體中文 - ZH-TW ▼

Currency: USD ▼
- RMB

新會員登錄

登錄

查看購物車

客服洽詢

Top >
Semiconductors > Discrete semiconductors >
FETs

Manufacturer

清除

點擊數21856～ / 型號名稱： / 狀態：全部 / 數量：0PCS~

Page　281 of 438

搜尋結果(Excel)

庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Device Package	Technology
質量保證 B-1	來自供應商的訂	IRF3415SPBF INFINEON	1			預計 11個工作天	核友型號：st75141165	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3415STRLPBF INFINEON	6,400	21+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76477657	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3415STRLPBF INFINEON	6,111	22+		預計 16個工作天	核友型號：st76078864	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3703PBF INFINEON	3,768	18+		預計 11個工作天	核友型號：st71361747	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3703PBF INFINEON	14			預計 11個工作天	核友型號：st75141166	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3709STRLPBF INFINEON	1			預計 11個工作天	核友型號：st75141167	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	90A (Tc)	2672 pF @ 16 V	3.1W(Ta), 120W(Tc)	9mOhms @ 15A, 10V	3V @ 250µA	41 nC @ 5 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3709ZPBF INFINEON	40			預計 11個工作天	核友型號：st75141168	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	87A(Tc)	2130 pF @ 15 V	79W (Tc)	6.3mOhms @ 21A, 10V	2.25V @ 250µA	26 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3710LPBF INFINEON	366			預計 11個工作天	核友型號：st75141169	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-2	來自供應商的訂	IRF3710PBF INFINEON	90,000	22/25+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76354859	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3710PBF INFINEON	974			預計 11個工作天	核友型號：st75141170	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF3710PBF INFINEON TECHNOLOGIES	138,039	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681663	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3710PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742467	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3710STRLPBF INFINEON	7,200	21+		預計 11個工作天	核友型號：st71361748	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3710STRLPBF INFINEON	20,540	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76513496	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3710STRLPBF INFINEON	165			預計 11個工作天	核友型號：st75141171	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3710STRLPBF INFINEON TECHNOLOGIES	18,400	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681664	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3710ZPBF INFINEON	1,920	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76502383	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3710ZPBF INFINEON	2			預計 11個工作天	核友型號：st75141172	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF3710ZSTRLPBF INFINEON	4,000	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76452052	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3710ZSTRLPBF INFINEON	800	22+		預計 11個工作天	核友型號：st75023622	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3805STRLPBF INFINEON	811	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76547006	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3805STRLPBF INFINEON	1			預計 11個工作天	核友型號：st75141173	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF3808PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742468	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3808PBF INFINEON	662	20+		預計 11個工作天	核友型號：st71361749	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF3808PBF INFINEON	9,000	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76446141	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3808PBF INFINEON	25			預計 11個工作天	核友型號：st75141174	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF3808SPBF INFINEON	6			預計 11個工作天	核友型號：st75141175	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	106A(Tc)	5310 pF @ 25 V	200W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF3808STRLPBF INFINEON	1,600	21+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76497486	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	106A(Tc)	5310 pF @ 25 V	200W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF40B207 INFINEON	740			預計 11個工作天	核友型號：st75141176	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	95A (Tc)	2110 pF @ 25 V	150°C (TJ)	4.5mOhms @ 57A, 10V	3.9V @ 50µA	68 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF40R207 INFINEON	500			預計 11個工作天	核友型號：st75141177	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	56A (Tc)	2110 pF @ 25 V	150°C (TJ)	5.1mOhms @ 55A, 10V	3.9V @ 50µA	68 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3
質量保證 B-1	來自供應商的訂海外位置	IRF4104PBF INFINEON	12,907	22+		預計 16個工作天	End of Life 核友型號：st49404337	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF4104PBF INFINEON	5			預計 11個工作天	核友型號：st75141178	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF4104SPBF INFINEON	8,000	21+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76474164	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4104SPBF INFINEON	28			預計 11個工作天	核友型號：st75141179	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905LPBF INFINEON	44			預計 11個工作天	核友型號：st75141180	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-262
質量保證 B-2	來自供應商的訂	IRF4905PBF INFINEON TECHNOLOGIES	2,600	N/A	MOQ : 500 SPQ : 250	預計 16個工作天	核友型號：st76681665	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF4905PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647273	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF4905PBF INFINEON	7,088	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76429075	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF4905PBF INFINEON	83,004	23+		預計 16個工作天	核友型號：st60358342	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF4905PBF INFINEON	106			預計 11個工作天	核友型號：st75141181	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF4905PbF INFINEON	871	10+		預計 11個工作天	核友型號：st73652239
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	4,803	21+		預計 11個工作天	核友型號：st71361750	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF4905STRLPBF INFINEON	1,678	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76378604	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	50,400	23+		預計 16個工作天	核友型號：st61363128	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	800	25+		預計 11個工作天	核友型號：st75027783	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	89			預計 11個工作天	核友型號：st75141182	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF4905STRLPBF INFINEON TECHNOLOGIES	8,010	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681666	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st70647274	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF510PBF VISHAY	3,363	22+		預計 16個工作天	核友型號：st76083656	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10 V	5.6A (Tc)	180 pF @ 25 V	43W (Tc)	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF520NPBF INFINEON	8,026	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400937	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB