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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Device Package	Technology
質量保證 B-1	來自供應商的訂	IRF520NPBF INFINEON	2,842	24+		預計 16個工作天	核友型號：st61363129	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF520NPBF INFINEON	8			預計 11個工作天	核友型號：st75141185	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5210PBF INFINEON TECHNOLOGIES	17,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681667	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5210PBF INFINEON	6,000	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76439298	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF5210PBF INFINEON	5,014	24+		預計 16個工作天	核友型號：st49404342	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5210PBF INTERNATIONAL RECTIFIER	12	04+		預計 11個工作天	核友型號：st65434572	INTERNATIONAL RECTIFIER	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5210STRLPBF INFINEON	1,841	21+		預計 11個工作天	核友型號：st71361752	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF5210STRLPBF INFINEON	28,006	24+		預計 16個工作天	核友型號：st49404343	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5210STRLPBF INFINEON	89			預計 11個工作天	核友型號：st75141187	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF5210STRLPBF INFINEON TECHNOLOGIES	66,400	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681668	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5210STRLPBF INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st72742469	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5210STRRPBF INFINEON	3,400	21+/22+	MOQ : 45 SPQ : 800	預計 8個工作天	核友型號：st73485677	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF5305PBF INFINEON TECHNOLOGIES	7,000	N/A	MOQ : 600 SPQ : 300	預計 16個工作天	核友型號：st76681669	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5305PBF INFINEON	8,808	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76399891	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5305PBF INFINEON	924			預計 11個工作天	核友型號：st75141188	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5305STRLPBF INFINEON	2,286	18+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76527645	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	31A (Tc)	1200 pF @ 25 V	3.8W(Ta), 110W(Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NPBF INFINEON	49,540	22/25+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76376238	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF530NPBF INFINEON	50,000	25+		預計 16個工作天	核友型號：st60358356	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF530NPBF INFINEON TECHNOLOGIES	216,723	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681670	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647276	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530NPbF INFINEON	1,000			預計 8個工作天	核友型號：st66225768
質量保證 B-1	來自供應商的訂	IRF530NSTRLPBF INFINEON	30,000	20+		預計 11個工作天	核友型號：st71361753	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF530NSTRLPBF INFINEON	581			預計 11個工作天	核友型號：st75141190	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NSTRLPBF INFINEON	400	22/23+	MOQ : 400 SPQ : 1	預計 11個工作天	核友型號：st76405673	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NSTRLPBF INFINEON TECHNOLOGIES	16,000	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681671	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF530NSTRLPBF INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st72742470	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530PBF VISHAY	4,730	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76372682	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10 V	14A (Tc)	670 pF @ 25 V	88W(Tc)	160mOhms @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530PBF VISHAY	284	20		預計 11個工作天	核友型號：st65329677	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10 V	14A (Tc)	670 pF @ 25 V	88W(Tc)	160mOhms @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NLPBF INFINEON	50			預計 11個工作天	核友型號：st75141191	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON	1,000	21+		預計 8個工作天	核友型號：st70572727	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF540NPBF INFINEON	33,063	24+		預計 16個工作天	核友型號：st60358361	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON	400	25+		預計 11個工作天	核友型號：st75027285	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF540NPBF INFINEON TECHNOLOGIES	219,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681672	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647277	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF540NSTRLPBF INFINEON	8,000	22+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76386650	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF540NSTRLPBF INFINEON	11,237	20+		預計 11個工作天	核友型號：st71361754	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF540NSTRLPBF INFINEON	48,650	25+		預計 16個工作天	核友型號：st49404352	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF540NSTRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141192	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF540PBF VISHAY	4	11+		預計 4個工作天	核友型號：st74845042	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10 V	28A (Tc)	1700 pF @ 25 V	-55°C ~ 175°C (TJ)	77mOhms @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540ZPBF INFINEON	38	1844+		預計 4個工作天	核友型號：st74840127	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	36A (Tc)	1770 pF @ 25 V	92W (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540ZPBF INFINEON	13			預計 11個工作天	核友型號：st75141194	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	36A (Tc)	1770 pF @ 25 V	92W (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5801TRPBF INFINEON	6,000	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400938	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	600mA (Ta)	88 pF @ 25 V	2W (Ta)	2.2Ohms @ 360mA, 10V	5.5V @ 250µA	3.9 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證	來自供應商的訂	IRF5801TRPBF INFINEON	14,640	23+		預計 16個工作天	核友型號：st60358364	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	600mA (Ta)	88 pF @ 25 V	2W (Ta)	2.2Ohms @ 360mA, 10V	5.5V @ 250µA	3.9 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5802TRPBF INFINEON	1,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76369599	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂海外位置	IRF5802TRPBF INFINEON	10,500	22+		預計 16個工作天	核友型號：st49404354	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5802TRPBF INFINEON	169			預計 11個工作天	核友型號：st75141195	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5802TRPBF INFINEON TECHNOLOGIES	9,000	N/A	MOQ : 3,000 SPQ : 3,000	預計 16個工作天	核友型號：st76681673	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5803TRPBF INFINEON	6,000	22+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76386651	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	3,000	21+		預計 11個工作天	核友型號：st71361755	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	12,000	22+		預計 4個工作天	核友型號：st74840089	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)