US6M11TR

ROHM

RoHS狀況:PBF

庫存類別:質量保證

供應商排名:B-2

Management ID:st76426060

Date Code:22/23+

US6M11TR_製品イメージ01

當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。


文档

規格書


商品說明

CategoryDiscrete semiconductors
ManufacturerROHM
Drain to Source Voltage (Vdss)20V, 12V
Current - Continuous Drain (Id) @ 25°C1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds110pF @ 10V
Power - Max1W
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate charge (Qg) when Vgs is applied (max)1.8nC @ 4.5V
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Operating Temperature Range150°C (TJ)
Mounting TypeSurface Mount
Device PackageTUMT6

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 21,513

MOQ:1,000

SPQ:1


替代型號

DMN1150UFB-7B

Diodes Inc.

CPH3348-TL-W

onsemi

MCH6320-TL-W

onsemi

BF1009SE6327

Infineon