QRE1113GR
ON SEMICONDUCTOR
RoHS狀況:N/A
庫存類別:質量保證
供應商排名:B-1
Management ID:st76212428
Date Code:N/A
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。
文件
商品說明
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Contact Plating | Tin |
| Dark Current | 1 nA |
| Fall Time | 20 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Height | 1.87 mm |
| Input Current | 50 mA |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 30 V |
| Max Collector Current | 900 µA |
| Max Operating Temperature | 85 °C |
| Max Power Dissipation | 75 mW |
| Min Operating Temperature | -40 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Operating Supply Voltage | 1.7 V |
| Output Type | Phototransistor |
| Output Voltage | 20 V |
| Packaging | Cut Tape |
| Power Dissipation | 75 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Response Time | 20 µs |
| Reverse Breakdown Voltage | 5 V |
| Reverse Voltage (DC) | 5 V |
| Rise Time | 20 µs |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance | 5.0038 mm |
| Wavelength | 940 nm |
| Weight | 78 mg |
| Width | 2.9 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
庫存量: 30,688
MOQ:71
SPQ:1
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 71 - 709 | $1.11 |
| 710 - 3,549 | $1.087 |
| 3,550 - 7,099 | $1.049 |
| 7,100 - 35,499 | $1.042 |
| 35,500 - 70,999 | $1.038 |
| 71,000 - 141,999 | $1.036 |
| 142,000 - 283,999 | $1.032 |
| 284,000 - | $1.031 |
