RE1C001UNTCL
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | TUMT3 |
| Current - Continuous Drain (Id) @ 25°C | 1.2V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 100mA (Ta) |
| Power Dissipation (Max) | 7.1 pF @ 10 V |
| Rds On (Max) @ Id, Vgs | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1V @ 100µA |
| Vgs (Max) | ±8V |
| Operating Temperature Range | ±8V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | EMT3F (SOT-416FL) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
