NTZD3155CT2G
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文件
商品說明
| Category | Discrete semiconductors Arrays |
| Manufacturer | ON SEMICONDUCTOR |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 540mA, 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
| Power - Max | 250mW |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 540mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 2.5nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | SOT-563 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
