IRF3710ZPBF
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFET® |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 59A(Tc) |
| Power Dissipation (Max) | 2900 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | -55°C ~ 150°C (TJ) |
| Vgs(th) (Max) @ Id | 18mOhms @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| Vgs (Max) | 120 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 175°C (TJ) |
| Device Package | Through Hole |
| Technology | TO-220AB |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
