US6K1TR
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| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 2.2nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | TUMT6 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 6,000
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 99 | $0.493 |
| 100 - 499 | $0.463 |
| 500 - 999 | $0.433 |
| 1,000 - 2,999 | $0.395 |
| 3,000 - 5,999 | $0.334 |
| 6,000 - 14,999 | $0.304 |
| 15,000 - | $0.266 |
| - | - |
