RS3L110ATTB1
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11A (Ta) |
| Power Dissipation (Max) | 6300 pF @ 30 V |
| Rds On (Max) @ Id, Vgs | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 12.8mOhms @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
| Vgs (Max) | 115 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | 8-SOP |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 2,500
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 99 | $1.177 |
| 100 - 499 | $1.093 |
| 500 - 999 | $1.017 |
| 1,000 - 2,499 | $0.941 |
| 2,500 - 4,999 | $0.782 |
| 5,000 - 12,499 | $0.721 |
| 12,500 - | $0.63 |
| - | - |
