R6007ENXC7G
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7A (Ta) |
| Power Dissipation (Max) | 390 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 620mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 1mA |
| Vgs (Max) | 20 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | TO-220-3 Full Pack |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 1,050
MOQ:50
SPQ:50
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 50 - 99 | $1.694 |
| 100 - 499 | $1.573 |
| 500 - 999 | $1.451 |
| 1,000 - 1,999 | $1.208 |
| 2,000 - 4,999 | $1.117 |
| 5,000 - 9,999 | $0.965 |
| 10,000 - | $0.904 |
| - | - |
