BSM180D12P2C101
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商品說明
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 204A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Power - Max | 1130W |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature Range | -40°C ~ 150°C (TJ) |
| Device Package | Module |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
