2SJ168(TE85L,F)
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200mA (Ta) |
| Power Dissipation (Max) | 85 pF @ 10 V |
| Rds On (Max) @ Id, Vgs | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2Ohms @ 50mA, 10V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | SC-59 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
