- Top >
- 半导体 >
- 分立半导体 >
- FETs >
- Discrete single >
- RF4G060ATTCR(ROHM)
RF4G060ATTCR
ROHM
RoHS状态:PBF
库存类别:质量保证库存
供应商排名:B-2
Management ID:st76433974
Date Code:22/23+
文档
产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6A (Ta) |
| Power Dissipation (Max) | 880 pF @ 20 V |
| Rds On (Max) @ Id, Vgs | 2W (Ta) |
| Vgs(th) (Max) @ Id | 40mOhms @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
| Vgs (Max) | 17.2 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | 22 nC @ 10 V |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 6,315
MOQ:500
SPQ:1





