产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Power - Max | 6W |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 5.8nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-LSON (3.3x3.3) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 5,298
MOQ:22
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 22 - 219 | $3.619 |
| 220 - 1,099 | $3.551 |
| 1,100 - 2,199 | $3.475 |
| 2,200 - 10,999 | $3.419 |
| 11,000 - 21,999 | $3.391 |
| 22,000 - 43,999 | $3.381 |
| 44,000 - 87,999 | $3.374 |
| 88,000 - | $3.367 |
