产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
| Power - Max | 6W |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 6.2nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-LSON (3.3x3.3) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
