MUN5211T1G
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产品属性
| Category | 分立半导体 Discrete single Pre-Biased |
| Manufacturer | ON SEMICONDUCTOR |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA/10V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 202 mW |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA/10mA |
| Product Overview | TRANS PREBIAS NPN 50V SC70-3 |
| Mounting Type | Surface Mount |
| Device Package | SC-70-3(SOT323) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
