产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 469pF @ 10V |
| Power - Max | 2.3W |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 5.4nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 5V Drive |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | 6-WSON (2x2) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
