- Top >
- 半导体 >
- 分立半导体 >
- FETs >
- Discrete single >
- RW1E014SNT2R(ROHM)
RW1E014SNT2R
本公司如有多个同型号产品同时显示时，不一定只限于上述图像的产品。
需要详细资讯时，请点击上面客服洽询与我们联络。
文档
产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1.4A (Ta) |
| Power Dissipation (Max) | 70 pF @ 10 V |
| Rds On (Max) @ Id, Vgs | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 240mOhm @ 1.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
| Vgs (Max) | 1.4 nC @ 5 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | 6-WEMT |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 5,661
MOQ:340
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 340 - 1,357 | $0.217 |
| 1,358 - 5,011 | $0.167 |
| 5,012 - | $0.152 |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
