产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
| Power - Max | 6W |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 6.2nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-LSON (3.3x3.3) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 65
MOQ:25
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 25 - 249 | $3.703 |
| 250 - 1,249 | $3.666 |
| 1,250 - 2,499 | $3.591 |
| 2,500 - 12,499 | $3.535 |
| 12,500 - 24,999 | $3.506 |
| 25,000 - 49,999 | $3.501 |
| 50,000 - 99,999 | $3.497 |
| 100,000 - | $3.49 |
