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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Automotive	Device Package	Technology
質量保證 B-1	來自供應商的訂	IRF100P219AKMA1 INFINEON	40			預計 11個工作天	核友型號：st75141123	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	203A(Tc)	12020 pF @ 50 V	3.8W(Ta), 341W(Tc)	1.7mOhms @ 100A, 10V	3.8V @ 278µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	PG-TO247-3
質量保證 B-1	來自供應商的訂	IRF100S201 INFINEON	3			預計 11個工作天	核友型號：st75141124	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	100V	10 V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250µA	255 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3
質量保證 B-1	來自供應商的訂	IRF1010EPBF INFINEON	5			預計 11個工作天	核友型號：st75141125	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	84A(Tc)	3210 pF @ 25 V	200W(Tc)	12mOhms @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1010EPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647269	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	84A(Tc)	3210 pF @ 25 V	200W(Tc)	12mOhms @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1010EZPBF INFINEON	370			預計 11個工作天	核友型號：st75141126	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	75A(Tc)	2810 pF @ 25 V	140W (Tc)	8.5mOhms @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1010N INFINEON	10	04+		預計 11個工作天	核友型號：st75022960	Infineon Technologies	Planar Mosfet	N-Channel		55V		72A				4V					Through Hole	TO-220
質量保證 B-1	來自供應商的訂	IRF1010NPBF INFINEON	8			預計 11個工作天	核友型號：st75141127	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1010NSTRLPBF INFINEON	1,600	19+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76436303	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1010NSTRLPBF INFINEON	25			預計 11個工作天	核友型號：st75141128	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1010ZPBF INFINEON	50			預計 11個工作天	核友型號：st75141129	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1010ZSTRLPBF INFINEON	4,440	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76469022	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1010ZSTRLPBF INFINEON	1,200	2318+		預計 16個工作天	核友型號：st76078861	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF1018EPBF INFINEON	20,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76411471	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	79A(Tc)	2290 pF @ 50 V	110W (Tc)	8.4mOhms @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1018ESTRLPBF INFINEON	168			預計 11個工作天	核友型號：st75141130	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	79A(Tc)	2290 pF @ 50 V	110W (Tc)	8.4mOhms @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1104PBF INFINEON	8			預計 11個工作天	核友型號：st75141131	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	100A (Tc)	2900 pF @ 25 V	170W(Tc)	9mOhms @ 60A, 10V	4V @ 250µA	93 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1310NPBF INFINEON	40			預計 11個工作天	核友型號：st75141132	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1310NSTRLPBF INFINEON	50			預計 11個工作天	核友型號：st75141133	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	42A (Tc)	1900 pF @ 25 V	3.8W(Ta), 160W(Tc)	36mOhms @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1324PBF INFINEON	9			預計 11個工作天	核友型號：st75141134	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	24V	10 V	195A(Tc)	7590 pF @ 24 V	300W(Tc)	1.5mOhms @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF135B203 INFINEON	14,006	17+		預計 11個工作天	核友型號：st71361738	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	135V	10 V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	PG-TO220-3
質量保證 B-1	來自供應商的訂	IRF135S203 INFINEON	10			預計 11個工作天	核友型號：st75141135	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	135V	10 V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3-2
質量保證 B-1	來自供應商的訂	IRF1404PBF INFINEON	10,000			預計 8個工作天	核友型號：st73247166	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404PBF INFINEON	27,129	21+		預計 11個工作天	核友型號：st71361739	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1404PBF INFINEON	2,350	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76422861	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404PBF INFINEON	960			預計 11個工作天	核友型號：st75141136	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1404PBF INFINEON TECHNOLOGIES	300,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681653	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742464	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404STRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141137	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	162A(Tc)	7360 pF @ 25 V	3.8W(Ta), 200W(Tc)	4mOhms @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF1404ZPBF INFINEON TECHNOLOGIES	16,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681654	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404ZPBF INFINEON	7,190	21+		預計 11個工作天	核友型號：st71361740	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1404ZPBF INFINEON	2,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76419231	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404ZPBF INFINEON	36			預計 11個工作天	核友型號：st75141138	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1404ZSPBF INFINEON	4			預計 11個工作天	核友型號：st75141139	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 150µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF1404ZSTRLPBF INFINEON	2,227	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76509952	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 150µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3
質量保證 B-2	來自供應商的訂	IRF1405PBF INFINEON TECHNOLOGIES	600	N/A	MOQ : 400 SPQ : 200	預計 16個工作天	核友型號：st76681655	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1405PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647270	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1405PBF INFINEON	12,000	21+		預計 11個工作天	核友型號：st71361741	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1405PBF INFINEON	305	21+	MOQ : 305 SPQ : 1	預計 11個工作天	核友型號：st76412896	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1405PBF INFINEON	1,000			預計 11個工作天	核友型號：st75141140	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1405STRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141141	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	131A(Tc)	5480 pF @ 25 V	200W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1405ZLPBF INFINEON	10			預計 11個工作天	核友型號：st75141142	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-262
質量保證 B-1	來自供應商的訂	IRF1405ZPBF INFINEON	10			預計 11個工作天	核友型號：st75141143	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1405ZSTRLPBF INFINEON	1			預計 11個工作天	核友型號：st75141144	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10 V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1407PBF INFINEON	15,750	21+		預計 11個工作天	核友型號：st71361742	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1407PBF INFINEON	123,400	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76419232	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1407PBF INFINEON	1,000			預計 11個工作天	核友型號：st75141145	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF1407PBF INFINEON TECHNOLOGIES	15,000	N/A	MOQ : 400 SPQ : 200	預計 16個工作天	核友型號：st76681656	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1407PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647271	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF1407STRLPBF INFINEON	8,618	17+		預計 11個工作天	核友型號：st71361743	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	100A (Tc)	5600 pF @ 25 V	3.8W(Ta), 200W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF1407STRLPBF INFINEON	20			預計 11個工作天	核友型號：st75141146	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	100A (Tc)	5600 pF @ 25 V	3.8W(Ta), 200W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF150P220 INFINEON	1,491	20+		預計 16個工作天	核友型號：st49404300	Infineon Technologies						203A			2.7 mOhms @ 10V	4.6V			-55.0°C ~ 175.0°C	Industrial	Through Hole	TO-247-3