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CoreStaff Part Number		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
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120

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Certified in Japan
CoreStaff Part Number：st74930633

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 105A (Tj) 4580 pF @ 500 V 175°C (TJ) 16.9mOhm @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4013DRC15

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108

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SPQ : 1

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Certified in Japan
CoreStaff Part Number：st74930635

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 105A(Tc) 4580 pF @ 500 V 175°C (TJ) 16.9mOhm @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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116

MOQ : 1
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Certified in Japan
CoreStaff Part Number：st74930636

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 105A (Tj) 4580 pF @ 500 V 175°C (TJ) 16.9mOhm @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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1,000

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Certified in Japan
CoreStaff Part Number：st74930637

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 98A (Tj) 4580 pF @ 500 V 175°C (TJ) 16.9mOhm @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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SCT4018KEC11

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96

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930638

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 81A (Tj) 4532 pF @ 800 V 175°C (TJ) 23.4mOhm @ 42A, 18V 4.8V @ 22.2mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4018KRC15

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2,310

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Certified in Japan
CoreStaff Part Number：st74930639

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 81A (Tc) 4532 pF @ 800 V 175°C (TJ) 23.4mOhm @ 42A, 18V 4.8V @ 22.2mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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1,000

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Certified in Japan
CoreStaff Part Number：st74930640

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 75A(Tj) 4532 pF @ 800 V 175°C (TJ) 23.4mOhm @ 42A, 18V 4.8V @ 22.2mA 170 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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SCT4026DEC11

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300

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930642

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 56A (Tc) 2320 pF @ 500 V 175°C (TJ) 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4026DEHRC11

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420

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930643

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 56A (Tc) 2320 pF @ 500 V 175°C (TJ) 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4026DLLTRDC

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2,000

MOQ : 5
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Certified in Japan
CoreStaff Part Number：st74930644

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 61A(Tc) 2320 pF @ 500 V 214W 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount 5.2 nC @ 6 V
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SCT4026DRC15

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450

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930645

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 56A (Tc) 2320 pF @ 500 V 175°C (TJ) 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4026DRHRC15

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30

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Certified in Japan
CoreStaff Part Number：st74930646

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 56A (Tc) 2320 pF @ 500 V 175°C (TJ) 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4026DW7HRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930647

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 51A (Tc) 2320 pF @ 500 V 150W 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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1,000

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Certified in Japan
CoreStaff Part Number：st74930648

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 51A(Tj) 2320 pF @ 500 V 150W 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
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SCT4026DWAHRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930649

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 51A (Tc) 2320 pF @ 500 V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930650

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 42A (Tc) 1794 pF @ 500 V 136W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 72 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930651

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 42A (Tc) 1794 pF @ 500 V 136W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 72 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
Franchise Stock
A-1 		Supplier Stock

SCT4036DLLTRDC

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2,000

MOQ : 5
SPQ : 5

Detail

Certified in Japan
CoreStaff Part Number：st74930652

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 46A(Tc) 1794 pF @ 500 V 164W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 72 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount 5.2 nC @ 6 V
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88

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930653

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 42A(Tj) 1794 pF @ 500 V 136W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 72 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930654

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 42A (Tc) 1794 pF @ 500 V 136W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 72 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4036KEC11

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Detail

Certified in Japan
CoreStaff Part Number：st75183788

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4036KEC11

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445

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930657

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4036KEHRC11

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300

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930658

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4036KRC15

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455 2023+

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Certified in Japan
CoreStaff Part Number：st75183744

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4036KRC15

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1,060

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Certified in Japan
CoreStaff Part Number：st74930659

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4036KRHRC15

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450

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930660

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 43A (Tc) 2335 pF @ 800 V 175°C (TJ) 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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1,000

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Certified in Japan
CoreStaff Part Number：st74930661

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 40A(Tj) 2335 pF @ 800 V 150W 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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SCT4045DEC11

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450

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930662

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 34A (Tc) 14600 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4045DEHRC11

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360

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SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930663

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 34A (Tc) 1460 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4045DLLTRDC

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2,000

MOQ : 5
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Certified in Japan
CoreStaff Part Number：st74930664

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 37A(Tc) 1460 pF @ 500 V 133W 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount 5.2 nC @ 6 V
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SCT4045DRC15

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310

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930665

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 34A (Tc) 1460 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4045DRHRC15

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450

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930666

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 34A (Tc) 1460 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4045DW7HRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930667

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 31A (Tc) 1460 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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1,000

MOQ : 1
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Certified in Japan
CoreStaff Part Number：st74930668

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 31A(Tj) 1460 pF @ 500 V 175°C (TJ) 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock

SCT4045DWAHRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930669

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 31A (Tc) 1460 pF @ 500 V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock

SCT4045DWATL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930670

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 31A (Tc) 1460 pF @ 500 V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock
115

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930671

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 32A(Tc) 1703 pF @ 800 V 136W 56mOhms @ 15A, 18V 4.8V @ 8mA 71 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
Franchise Stock
A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930672

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 32A(Tj) 1703 pF @ 800 V 136W 65mOhms @ 15A, 18V 4.8V @ 8mA 71 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930673

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 32A(Tj) 1703 pF @ 800 V 136W 65mOhms @ 15A, 18V 4.8V @ 8mA 71 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930674

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 32A(Tc) 1703 pF @ 800 V 136W 65mOhms @ 15A, 18V 4.8V @ 8mA 71 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
Franchise Stock
A-1 		Supplier Stock

SCT4062KEC11

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410

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930676

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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A-2

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SCT4062KEC11

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10 2023+

MOQ : 5
SPQ : 5

Detail

Certified in Japan
CoreStaff Part Number：st75178274

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4062KEHRC11

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30

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930677

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V
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SCT4062KRC15

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395

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930678

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4062KRC15

PDF RoHS
10 2023+

MOQ : 5
SPQ : 5

Detail

Certified in Japan
CoreStaff Part Number：st75178275

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4062KRHRC15

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270

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930679

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 26A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 170 nC @ 18 V
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SCT4062KW7HRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930680

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 24A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930681

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 24A (Tj) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock

SCT4062KWAHRTL

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1,000

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930682

ROHM N-Channel SiCFET (Silicon Carbide) 1200V Through Hole 24A (Tc) 1498 pF @ 800 V 175°C (TJ) 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V TO-263-7LA 175°C (TJ) Surface Mount TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Franchise Stock
A-1 		Supplier Stock
120

MOQ : 1
SPQ : 1

Detail

Certified in Japan
CoreStaff Part Number：st74930683

ROHM N-Channel SiCFET (Silicon Carbide) 750V Through Hole 25A(Tj) 1066 pF @ 500 V 88W 85mOhms @ 12A, 18V 4.8V @ 6.15mA 48 nC @ 18 V TO-263-7LA 175°C (TJ) Through Hole 48 nC @ 18 V

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