Manufacturer

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Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1
來自供應商的訂

IRLML9301TRPBF

IRLML9301TRPBF
INFINEON

20,089 24+  

預計 16個工作天

核友型號:st76078920

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.6A (Ta) 388 pF @ 25 V 1.3W (Ta) 64mOhms @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1
來自供應商的訂

IRLML9303TRPBF
INFINEON

1,026  

預計 11個工作天

核友型號:st75141701

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1
來自供應商的訂

IRLML9303TRPBF
INFINEON

9,000 21+  

預計 11個工作天

核友型號:st71361850

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1
來自供應商的訂

IRLML9303TRPBF
INFINEON

6,927 22+  

預計 16個工作天

核友型號:st76078921

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1
來自供應商的訂

IRLMS1503TRPBF
INFINEON

42  

預計 11個工作天

核友型號:st75141702

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.2A (Ta) 210 pF @ 25 V 1.7W (Ta) 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1
來自供應商的訂

IRLMS1503TRPBF
INFINEON

4,081 22+  

預計 16個工作天

核友型號:st76078922

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.2A (Ta) 210 pF @ 25 V 1.7W (Ta) 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1
來自供應商的訂

IRLMS1902TRPBF

IRLMS1902TRPBF
INFINEON

100  

預計 11個工作天

核友型號:st75141703

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 3.2A (Ta) 300 pF @ 15 V 1.7W (Ta) 100mOhms @ 2.2A, 4.5V 700mV @ 250µA(Mim) 7 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1
來自供應商的訂

IRLMS2002TRPBF

IRLMS2002TRPBF
INFINEON

129  

預計 11個工作天

核友型號:st75141704

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 6.5A (Ta) 1310 pF @ 15 V 2W (Ta) 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(SOT23-6)
質量保證
B-1
來自供應商的訂

IRLMS6802TRPBF
INFINEON

841  

預計 11個工作天

核友型號:st75141705

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 5.6A (Ta) 1079 pF @ 10 V 2W (Ta) 50mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1
來自供應商的訂

IRLMS6802TRPBF
INFINEON

15,173 22+  

預計 16個工作天

核友型號:st76078923

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 5.6A (Ta) 1079 pF @ 10 V 2W (Ta) 50mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1
來自供應商的訂

IRLR024NTRLPBF

IRLR024NTRLPBF
INFINEON

54  

預計 11個工作天

核友型號:st75141706

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

967  

預計 11個工作天

核友型號:st75141707

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

RoHS
50,000 22/26+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號:st76339127

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

35,000 25+  

預計 16個工作天

核友型號:st61363141

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR024NTRPBF
INFINEON TECHNOLOGIES

2,000   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號:st72742511

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR024NTRPBF
INFINEON TECHNOLOGIES

215,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號:st76681794

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR120NTRLPBF
INFINEON

50  

預計 11個工作天

核友型號:st75141708

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR120NTRPBF
INFINEON

11,586  

預計 11個工作天

核友型號:st75141709

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR120NTRPBF
INFINEON

RoHS
7,479 22/23+   MOQ : 2,500
SPQ : 1

預計 11個工作天

核友型號:st76380189

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂
海外位置

IRLR120NTRPBF
INFINEON

130,540 22+  

預計 16個工作天

核友型號:st50162028

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR120NTRPBF
INFINEON TECHNOLOGIES

2,000   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號:st72742512

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2705PBF

IRLR2705PBF
INFINEON

34  

預計 11個工作天

核友型號:st75141710

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 28A (Tc) 880 pF @ 25 V 68W (Tc) 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2705TRLPBF
INFINEON

89  

預計 11個工作天

核友型號:st75141711

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 28A (Tc) 880 pF @ 25 V 68W (Tc) 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR2705TRPBF

IRLR2705TRPBF
INFINEON

RoHS
4,000 22/23+   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號:st76385678

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 28A (Tc) 880 pF @ 25 V 68W (Tc) 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2905TRLPBF
INFINEON

70  

預計 11個工作天

核友型號:st75141712

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 42A (Tc) 1700 pF @ 25 V 110W (Tc) 27mOhms @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2905TRPBF

IRLR2905TRPBF
INFINEON

171  

預計 11個工作天

核友型號:st75141713

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 42A (Tc) 1700 pF @ 25 V 110W (Tc) 27mOhms @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR2905TRPBF

IRLR2905TRPBF
INFINEON

RoHS
8,342 22/23+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號:st76495169

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 42A (Tc) 1700 pF @ 25 V 110W (Tc) 27mOhms @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR2905TRPBF
INFINEON TECHNOLOGIES

32,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號:st76681795

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 42A (Tc) 1700 pF @ 25 V 110W (Tc) 27mOhms @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2905ZTRPBF

IRLR2905ZTRPBF
INFINEON

10,400 21+  

預計 11個工作天

核友型號:st71361851

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 1570 pF @ 25 V 110W (Tc) 13.5mOhms @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2905ZTRPBF

IRLR2905ZTRPBF
INFINEON

10  

預計 11個工作天

核友型號:st75141714

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 1570 pF @ 25 V 110W (Tc) 13.5mOhms @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2905ZTRPBF

IRLR2905ZTRPBF
INFINEON

21,418 26+  

預計 16個工作天

核友型號:st63301455

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 1570 pF @ 25 V 110W (Tc) 13.5mOhms @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR2908TRPBF

IRLR2908TRPBF
INFINEON

RoHS
500 21+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號:st76422864

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 80V 4.5V, 10V 30A (Tc) 1890 pF @ 25 V 150°C (TJ) 28mOhms @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR2908TRPBF

IRLR2908TRPBF
INFINEON

2,000 24+  

預計 11個工作天

核友型號:st75019375

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 80V 4.5V, 10V 30A (Tc) 1890 pF @ 25 V 150°C (TJ) 28mOhms @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3110ZTRLPBF

79  

預計 11個工作天

核友型號:st75141715

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR3110ZTRLPBF

RoHS
30,353 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號:st76412938

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂
海外位置

IRLR3110ZTRPBF

IRLR3110ZTRPBF
INFINEON

2,111 22+  

預計 16個工作天

核友型號:st49404811

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3110ZTRPBF
INFINEON

3,304 21+  

預計 11個工作天

核友型號:st71361852

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3110ZTRPBF
INFINEON

26  

預計 11個工作天

核友型號:st75141716

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR3110ZTRPBF
INFINEON

RoHS
16,000 19+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號:st76412939

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 42A (Tc) 3980 pF @ 25 V 140W (Tc) 14mOhms @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3114ZTRPBF
INFINEON

2  

預計 11個工作天

核友型號:st75141717

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 42A (Tc) 3810 pF @ 25 V 140W (Tc) 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR3114ZTRPBF
INFINEON

RoHS
18,005 17+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號:st76400945

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 42A (Tc) 3810 pF @ 25 V 140W (Tc) 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3410TRLPBF

IRLR3410TRLPBF
INFINEON

55  

預計 11個工作天

核友型號:st75141718

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3410TRPBF

IRLR3410TRPBF
INFINEON

196  

預計 11個工作天

核友型號:st75141719

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
來自供應商的訂

IRLR3410TRPBF

IRLR3410TRPBF
INFINEON

5,555 24+  

預計 16個工作天

核友型號:st60359225

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3410TRPBF

IRLR3410TRPBF
INFINEON

5,000 24+  

預計 11個工作天

核友型號:st75028740

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR3410TRPBF

IRLR3410TRPBF
INFINEON

RoHS
2,070 22/24+   MOQ : 2,070
SPQ : 1

預計 11個工作天

核友型號:st76382029

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3410TRPBF
INFINEON TECHNOLOGIES

2,000   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號:st72742513

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
來自供應商的訂

IRLR3410TRPBF
INFINEON TECHNOLOGIES

118,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號:st76681796

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂

IRLR3410TRRPBF
INFINEON

59  

預計 11個工作天

核友型號:st75141720

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
來自供應商的訂
526  

預計 11個工作天

核友型號:st70448941

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 50A (Tc) 3779 pF @ 50 V 143W(Tc) 6.8mOhms @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)

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