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FETs

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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Device Package	Technology
質量保證 B-1	來自供應商的訂	IRFR9024NTRPBF INFINEON	100,000	25+		預計 16個工作天	核友型號：st61363137	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9024NTRPBF INFINEON	17,058			預計 11個工作天	核友型號：st75141519	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	來自供應商的訂	IRFR9024NTRPBF INFINEON TECHNOLOGIES	112,000	N/A	MOQ : 2,000 SPQ : 2,000	預計 16個工作天	核友型號：st76681760	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10 V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9110 INTERNATIONAL RECTIFIER	2,983	01+		預計 11個工作天	核友型號：st65432407	INTERNATIONAL RECTIFIER		P-Channel	MOSFET (Metal Oxide)	100V	10 V	3.1A (Tc)	200 pF @ 25 V	2.5W (Ta), 25W (Tc)	1.2Ohms @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	來自供應商的訂	IRFR9120NTRLPBF INFINEON	3,309	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76466900	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9120NTRLPBF INFINEON	50			預計 11個工作天	核友型號：st75141520	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證	來自供應商的訂	IRFR9120NTRPBF INFINEON	41,320	23+		預計 16個工作天	核友型號：st60358888	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON	500			預計 11個工作天	核友型號：st75141521	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON TECHNOLOGIES	50	25+		預計 11個工作天	核友型號：st75027753	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	來自供應商的訂	IRFR9120NTRPBF INFINEON TECHNOLOGIES	26,000	N/A	MOQ : 2,000 SPQ : 2,000	預計 16個工作天	核友型號：st76681761	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON TECHNOLOGIES	2,000		MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st72742496	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10 V	6.6A(Tc)	350 pF @ 25 V	150°C (TJ)	480mOhms @ 3.9A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	來自供應商的訂	IRFS3004TRL7PP INFINEON	8,893	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76415681	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10 V	240A(Tc)	9130 pF @ 25 V	380W(Tc)	1.25mOhms @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-2	來自供應商的訂	IRFS3006TRL7PP INFINEON	1,543	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76545739	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	240A(Tc)	8850 pF @ 50 V	375W(Tc)	2.1mOhms @ 168A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	來自供應商的訂海外位置	IRFS3006TRLPBF INFINEON	2,000	25+		預計 16個工作天	核友型號：st49404671	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3006TRLPBF INFINEON	3			預計 11個工作天	核友型號：st75141527	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3006TRLPBF INFINEON	982	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76545876	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3107PBF INFINEON	7			預計 11個工作天	核友型號：st75141528	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	195A(Tc)	9370 pF @ 50 V	-55°C ~ 150°C (TJ)	3mOhms @ 140A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3107TRLPBF INFINEON	2,314	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76544425	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	195A(Tc)	9370 pF @ 50 V	-55°C ~ 150°C (TJ)	3mOhms @ 140A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3107TRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141529	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	195A(Tc)	9370 pF @ 50 V	-55°C ~ 150°C (TJ)	3mOhms @ 140A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3206TRRPBF INFINEON	7,565	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76457734	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3206TRRPBF INFINEON	4,000	20+		預計 11個工作天	核友型號：st71361809	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRFS3206TRRPBF INFINEON	2,000	21+		預計 16個工作天	核友型號：st49404674	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3206TRRPBF INFINEON	3			預計 11個工作天	核友型號：st75141530	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3207TRLPBF INFINEON	915	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76527104	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	170A(Tc)	7600 pF @ 50 V	300W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	5,600	21+		預計 11個工作天	核友型號：st71361810	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	6,400	23+		預計 16個工作天	核友型號：st76078906	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3306TRLPBF INFINEON	2,400	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76478633	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141531	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3307ZTRLPBF INFINEON	800	22+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76477661	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3307ZTRLPBF INFINEON	12			預計 11個工作天	核友型號：st75141532	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS3307ZTRRPBF INFINEON	745	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76532031	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263(D2PAK)
質量保證 B-2	來自供應商的訂	IRFS3607TRLPBF INFINEON	3,200	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76438173	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3607TRLPBF INFINEON	10,838	21+		預計 11個工作天	核友型號：st71361811	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3607TRLPBF INFINEON	5			預計 11個工作天	核友型號：st75141533	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10 V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRFS3806TRLPBF INFINEON	12,000	24+		預計 16個工作天	核友型號：st49404677	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	43A (Tc)	1150 pF @ 50 V	71W (Tc)	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS3806TRLPBF INFINEON	207			預計 11個工作天	核友型號：st75141534	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10 V	43A (Tc)	1150 pF @ 50 V	71W (Tc)	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS38N20DPBF INFINEON	10			預計 11個工作天	核友型號：st75141535	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS38N20DTRLP INFINEON	1,989	22+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76465750	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS38N20DTRLP INFINEON	1,767	22+		預計 16個工作天	核友型號：st76078907	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS38N20DTRLP INFINEON	163			預計 11個工作天	核友型號：st75141536	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10 V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4010TRL7PP INFINEON	4,265	16+		預計 11個工作天	核友型號：st71361812	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	190A(Tc)	9830 pF @ 50 V	380W(Tc)	4mOhms @ 110A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4010TRLPBF INFINEON	510	22+		預計 11個工作天	核友型號：st75020174	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	180A (Tc)	9575 pF @ 50 V	375W(Tc)	4.7mOhms @ 106A, 10V	4V @ 250µA	215 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFS4010TRLPBF INFINEON	6,759	22+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76429811	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	180A (Tc)	9575 pF @ 50 V	375W(Tc)	4.7mOhms @ 106A, 10V	4V @ 250µA	215 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4010TRLPBF INFINEON	4,372	22+		預計 16個工作天	核友型號：st76078908	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	180A (Tc)	9575 pF @ 50 V	375W(Tc)	4.7mOhms @ 106A, 10V	4V @ 250µA	215 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4010TRLPBF INFINEON	1			預計 11個工作天	核友型號：st75141537	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10 V	180A (Tc)	9575 pF @ 50 V	375W(Tc)	4.7mOhms @ 106A, 10V	4V @ 250µA	215 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4020TRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141538	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	200V	10 V	18A (Tc)	1200 pF @ 50 V	150°C (TJ)	105mOhms @ 11A, 10V	4.9V @ 100µA	29 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRFS4115TRL7PP INFINEON	19,200	18+		預計 11個工作天	核友型號：st71361813	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	105A(Tc)	5320 pF @ 50 V	380W(Tc)	11.8mOhms @ 63A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	來自供應商的訂	IRFS4115TRL7PP INFINEON	4			預計 11個工作天	核友型號：st75141539	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	105A(Tc)	5320 pF @ 50 V	380W(Tc)	11.8mOhms @ 63A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	來自供應商的訂	IRFS4115TRL7PP INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st70647325	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	105A(Tc)	5320 pF @ 50 V	380W(Tc)	11.8mOhms @ 63A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	來自供應商的訂海外位置	IRFS4115TRLPBF INFINEON	8,111	25+		預計 16個工作天	核友型號：st49404681	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10 V	195A(Tc)	5270 pF @ 50 V	375W(Tc)	12.1mOhms @ 62A, 10V	5V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK