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核友管理編號		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1 		來自供應商的訂

IRF1405PBF
INFINEON TECHNOLOGIES

4,324 N/A

MOQ : 28
SPQ : 1

Detail

核友型號：st76809234

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10 V 169A(Tc) 5480 pF @ 25 V 330W(Tc) 5.3mOhms @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		日本供應商

IRF250P224
INFINEON

RoHS
400 1TRU209149L80

MOQ : 400
SPQ : 400

Detail

End of Life 核友型號：st50407940

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 250V 10 V 96A(Tc) 9915 pF @ 50 V 313W(Tc) 12mOhms @ 58A, 10V 4V @ 270µA 203 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRF2804STRLPBF
INFINEON TECHNOLOGIES

1,456 N/A

MOQ : 34
SPQ : 1

Detail

核友型號：st76200019

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 10 V 75A(Tc) 6450 pF @ 25 V 300W(Tc) 2mOhms @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF2807STRLPBF
INFINEON TECHNOLOGIES

800 N/A

MOQ : 27
SPQ : 1

Detail

核友型號：st76296852

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10 V 82A(Tc) 3820 pF @ 25 V 230W(Tc) 13mOhms @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		corestaff CoreStaff US stock

IRF3007STRLPBF
INFINEON

RoHS
75 22

MOQ : 25
SPQ : 1

Detail

核友型號：st64679563

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10 V 62A(Tc) 3270 pF @ 25 V 150°C (TJ) 12.6mOhms @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3205PBF

IRF3205PBF
INFINEON

584

MOQ : 90
SPQ : 10

Detail

核友型號：st71301692

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10 V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3205ZPBF
INFINEON TECHNOLOGIES

3,916 N/A

MOQ : 61
SPQ : 1

Detail

核友型號：st76200020

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10 V 75A(Tc) 3450 pF @ 25 V 170W(Tc) 6.5mOhms @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3205ZSTRLPBF
INFINEON TECHNOLOGIES

1,700 N/A

MOQ : 54
SPQ : 1

Detail

核友型號：st76809235

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10 V 75A(Tc) 3450 pF @ 25 V 170W(Tc) 6.5mOhms @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂
海外位置

IRF3710PBF

IRF3710PBF
INFINEON

RoHS
229

MOQ : 36
SPQ : 1

Detail

核友型號：st44440251

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3710STRLPBF
INFINEON TECHNOLOGIES

837 N/A

MOQ : 30
SPQ : 1

Detail

核友型號：st76200022

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3710STRRPBF
INFINEON

690

MOQ : 207
SPQ : 1

Detail

核友型號：st72042096

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		corestaff CoreStaff US stock

IRF3710STRRPBF
INFINEON

690 13

MOQ : 28
SPQ : 1

Detail

核友型號：st68231184

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3808PBF
INFINEON TECHNOLOGIES

601 N/A

MOQ : 27
SPQ : 1

Detail

核友型號：st76809236

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10 V 140A(Tc) 5310 pF @ 25 V 330W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		corestaff CoreStaff US stock

IRF4905PBF

IRF4905PBF
INFINEON

RoHS
72 19

MOQ : 25
SPQ : 1

Detail

核友型號：st67195462

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10 V 74A (Tc) 3400 pF @ 25 V 200W(Tc) 20mOhms @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		corestaff CoreStaff US stock

IRF4905STRLPBF

IRF4905STRLPBF
INFINEON

RoHS
113 23

MOQ : 22
SPQ : 1

Detail

核友型號：st72787911

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10 V 42A (Tc) 3500 pF @ 25 V 170W(Tc) 20mOhms @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF520NPBF

IRF520NPBF
INFINEON

288

MOQ : 150
SPQ : 10

Detail

核友型號：st71301693

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 9.7A(Tc) 330 pF @ 25 V 48W (Tc) 200mOhms @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF520NPBF
INFINEON TECHNOLOGIES

834 N/A

MOQ : 50
SPQ : 1

Detail

核友型號：st76200025

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 9.7A(Tc) 330 pF @ 25 V 48W (Tc) 200mOhms @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		corestaff CoreStaff US stock

IRF5210S
INFINEON

RoHS
30 24

MOQ : 19
SPQ : 1

Detail

核友型號：st74546437

Infineon Technologies P-Channel -100V -38A 60 mOhms @ 10V -3V Standard D2PAK (TO-263)
質量保證
B-1 		來自供應商的訂

IRF5210STRLPBF

IRF5210STRLPBF
INFINEON

16,000 2221+

MOQ : 1
SPQ : 1

Detail

核友型號：st63742009

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10 V 38A (Tc) 2780 pF @ 25 V 3.1W(Ta), 170W(Tc) 60mOhms @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount D2PAK
質量保證
B-1 		corestaff CoreStaff US stock

IRF5210STRLPBF

IRF5210STRLPBF
INFINEON

RoHS
140 18

MOQ : 19
SPQ : 1

Detail

核友型號：st61375562

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10 V 38A (Tc) 2780 pF @ 25 V 3.1W(Ta), 170W(Tc) 60mOhms @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF5210STRLPBF
INFINEON TECHNOLOGIES

7,945 N/A

MOQ : 18
SPQ : 1

Detail

核友型號：st76700994

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10 V 38A (Tc) 2780 pF @ 25 V 3.1W(Ta), 170W(Tc) 60mOhms @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF5305PBF
INFINEON TECHNOLOGIES

5,484 N/A

MOQ : 34
SPQ : 1

Detail

核友型號：st76200028

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10 V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 60mOhms @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 155°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF5305STRLPBF
INFINEON TECHNOLOGIES

391 N/A

MOQ : 46
SPQ : 1

Detail

核友型號：st76296851

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10 V 31A (Tc) 1200 pF @ 25 V 3.8W(Ta), 110W(Tc) 60mOhms @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF530NPBF

IRF530NPBF
INFINEON

RoHS
230

MOQ : 88
SPQ : 1

Detail

核友型號：st73194720

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 17A (Tc) 920 pF @ 25 V 70W (Tc) 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF530NSTRLPBF

IRF530NSTRLPBF
INFINEON TECHNOLOGIES

22,114 N/A

MOQ : 38
SPQ : 1

Detail

核友型號：st76296850

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 17A (Tc) 920 pF @ 25 V 3.8W(Ta), 70W(Tc) 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF540NSTRLPBF
INFINEON TECHNOLOGIES

1,635 N/A

MOQ : 32
SPQ : 1

Detail

核友型號：st76700995

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 33A (Tc) 1960 pF @ 25 V 130W (Tc) 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF540ZPBF
INFINEON TECHNOLOGIES

708 N/A

MOQ : 36
SPQ : 1

Detail

核友型號：st76809237

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 36A (Tc) 1770 pF @ 25 V 92W (Tc) 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF5802TRPBF
INFINEON TECHNOLOGIES

3,544 N/A

MOQ : 94
SPQ : 1

Detail

核友型號：st76809238

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 900mA (Ta) 88 pF @ 25 V 2W (Ta) 1.2Ohms @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		corestaff CoreStaff US stock

IRF6215STRLPBF
INFINEON

RoHS
13 22

MOQ : 12
SPQ : 1

Detail

核友型號：st70531018

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10 V 13A (Tc) 860 pF @ 25 V 3.8W(Ta), 110W(Tc) 290mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF630NSTRLPBF
INFINEON TECHNOLOGIES

1,547 N/A

MOQ : 32
SPQ : 1

Detail

核友型號：st76200030

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF640NPBF

IRF640NPBF
INFINEON

962

MOQ : 160
SPQ : 10

Detail

核友型號：st71301694

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF640NSTRLPBF

IRF640NSTRLPBF
INFINEON

37,600 22+

MOQ : 1
SPQ : 1

Detail

核友型號：st63742011

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF7103TRPBF

IRF7103TRPBF
INFINEON

36,000 2223+

MOQ : 1
SPQ : 1

Detail

核友型號：st63742012

Infineon Technologies HEXFET® 50V 3A 290pF @ 25V 2W 130mOhm @ 3A, 10V 3V @ 250μA 30nC @ 10V MOSFET (Metal Oxide) 2 N-Channel (Dual) -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7104TRPBF
INFINEON TECHNOLOGIES

7,337 N/A

MOQ : 84
SPQ : 1

Detail

核友型號：st76809239

Infineon Technologies HEXFET® 20V 2.3A 290pF @ 15V 2W 250mOhm @ 1A, 10V 3V @ 250μA 25nC @ 10V MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7105TRPBF
INFINEON TECHNOLOGIES

3,693 N/A

MOQ : 34
SPQ : 1

Detail

核友型號：st76200031

Infineon Technologies HEXFET® 25V 3.5A, 2.3A 330pF @ 15V 2W 100mOhm @ 1A, 10V 3V @ 250μA 27nC @ 10V MOSFET (Metal Oxide) N and P-Channel -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7205TRPBF
INFINEON TECHNOLOGIES

4,064 N/A

MOQ : 110
SPQ : 1

Detail

核友型號：st76200032

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 4.6A(TA) 870 pF @ 10 V 2.5W (Tc) 70mOhms @ 4.6A, 10V 3V @ 250µA 40 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7303TRPBF
INFINEON TECHNOLOGIES

4,747 N/A

MOQ : 30
SPQ : 1

Detail

核友型號：st76200033

Infineon Technologies HEXFET® 30V 4.9A 520pF @ 25V 2W 50mOhm @ 2.4A, 10V 1V @ 250μA 25nC @ 10V MOSFET (Metal Oxide) 2 N-Channel (Dual) -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7309TRPBF
INFINEON TECHNOLOGIES

722 N/A

MOQ : 75
SPQ : 1

Detail

核友型號：st76200034

Infineon Technologies HEXFET® 30V 4A, 3A 520pF @ 15V 1.4W 50mOhm @ 2.4A, 10V 1V @ 250μA 25nC @ 4.5V MOSFET (Metal Oxide) N and P-Channel -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7313TRPBF
INFINEON TECHNOLOGIES

7,949 N/A

MOQ : 71
SPQ : 1

Detail

核友型號：st76809240

質量保證
B-1 		來自供應商的訂

IRF7316TRPBF
INFINEON TECHNOLOGIES

8,909 N/A

MOQ : 97
SPQ : 1

Detail

核友型號：st76200035

Infineon Technologies HEXFET® 30V 4.9A 710pF @ 25V 2W 58mOhm @ 4.9A, 10V 1V @ 250μA 34nC @ 10V MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7341QTRPBF
INFINEON

4,000 1840+

MOQ : 1
SPQ : 1

Detail

核友型號：st67105521

質量保證
B-1 		corestaff CoreStaff US stock

IRF7341TRPBF

IRF7341TRPBF
INFINEON

RoHS
3,652 23

MOQ : 75
SPQ : 1

Detail

核友型號：st71723476

Infineon Technologies HEXFET® 55V 4.7A 740pF @ 25V 2W 50mOhm @ 4.7A, 10V 1V @ 250μA 36nC @ 10V MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7341TRPBF

IRF7341TRPBF
INFINEON

20,000 2223+

MOQ : 1
SPQ : 1

Detail

核友型號：st63742014

Infineon Technologies HEXFET® 55V 4.7A 740pF @ 25V 2W 50mOhm @ 4.7A, 10V 1V @ 250μA 36nC @ 10V MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂
RoHS
3,900

MOQ : 88
SPQ : 1

Detail

核友型號：st73194721

Infineon Technologies 2 N-Channel (Dual)
質量保證
B-1 		來自供應商的訂

IRF7343TRPBF

IRF7343TRPBF
INFINEON

RoHS
2,335

MOQ : 32
SPQ : 1

Detail

核友型號：st73194722

Infineon Technologies HEXFET® 55V 4.7A, 3.4A 740pF @ 25V 2W 50mOhm @ 4.7A, 10V 1V @ 250μA 36nC @ 10V MOSFET (Metal Oxide) N and P-Channel -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		來自供應商的訂

IRF7351TRPBF
INFINEON TECHNOLOGIES

7,988 N/A

MOQ : 37
SPQ : 1

Detail

核友型號：st76809241

Infineon Technologies HEXFET® 60V 8A 1330pF @ 30V 2W 17.8mOhm @ 8A, 10V 4V @ 50μA 36nC @ 10V MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO

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