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预定出货日 ECAD模型 资讯
核友型号
Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1
来自供应商的订

IRLR3636TRLPBF

IRLR3636TRLPBF
INFINEON

526  

预计 11个工作日

核友型号:st70448942

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 50A (Tc) 3779 pF @ 50 V 143W(Tc) 6.8mOhms @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3636TRLPBF

IRLR3636TRLPBF
INFINEON

468  

预计 11个工作日

核友型号:st75141721

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 50A (Tc) 3779 pF @ 50 V 143W(Tc) 6.8mOhms @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3636TRPBF

IRLR3636TRPBF
INFINEON

17,719 22+  

预计 16个工作日

核友型号:st76078924

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 50A (Tc) 3779 pF @ 50 V 143W(Tc) 6.8mOhms @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3705ZTRPBF
INFINEON

10  

预计 11个工作日

核友型号:st75141722

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 2900 pF @ 25 V 130W (Tc) 8mOhms @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3705ZTRPBF
INFINEON

6,020 21+  

预计 11个工作日

核友型号:st71361853

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 2900 pF @ 25 V 130W (Tc) 8mOhms @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3705ZTRPBF
INFINEON

3,596 21+23+  

预计 16个工作日

核友型号:st76078925

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 2900 pF @ 25 V 130W (Tc) 8mOhms @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR3705ZTRPBF
INFINEON

RoHS
3,546 22/24+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st76431088

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 42A (Tc) 2900 pF @ 25 V 130W (Tc) 8mOhms @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3802PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141723

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 12V 2.8V, 4.5V 84A(Tc) 2490 pF @ 6 V 88W(Tc) 8.5mOhms @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR3915TRPBF
INFINEON

RoHS
4,243 21+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st76439299

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 5V, 10V 30A (Tc) 1870 pF @ 25 V 150°C (TJ) 14mOhms @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR3915TRPBF
INFINEON

2  

预计 11个工作日

核友型号:st75141724

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 5V, 10V 30A (Tc) 1870 pF @ 25 V 150°C (TJ) 14mOhms @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR4132TRPBF
INFINEON

20  

预计 11个工作日

核友型号:st75141725

Infineon Technologies
質量保證
B-1
来自供应商的订

IRLR6225TRPBF

IRLR6225TRPBF
INFINEON

10  

预计 11个工作日

核友型号:st75141726

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 100A (Tc) 3770 pF @ 10 V 63W(Tc) 4mOhms @ 21A, 4.5V 1.1V @ 50µA 72 nC @ 4.5 V ±12V -50°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR7833TRLPBF
INFINEON

530  

预计 11个工作日

核友型号:st75141727

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 140A(Tc) 4010 pF @ 15 V 140W (Tc) 4.5mOhms @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR7833TRPBF
INFINEON

1,141 22+  

预计 16个工作日

核友型号:st61363142

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 140A(Tc) 4010 pF @ 15 V 140W (Tc) 4.5mOhms @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR7843TRPBF

IRLR7843TRPBF
INFINEON

632  

预计 11个工作日

核友型号:st75141728

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 161A (Tc) 4380 pF @ 15 V 140W (Tc) 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
来自供应商的订

IRLR7843TRPBF

IRLR7843TRPBF
INFINEON

7,268 22+  

预计 16个工作日

核友型号:st60359237

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 161A (Tc) 4380 pF @ 15 V 140W (Tc) 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8256TRPBF
INFINEON

34  

预计 11个工作日

核友型号:st75141729

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 25V 4.5V, 10V 81A (Tc) 1470 pF @ 13 V 63W(Tc) 5.7mOhms @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8259TRPBF

IRLR8259TRPBF
INFINEON

51  

预计 11个工作日

核友型号:st75141730

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 25V 4.5V, 10V 57A(Tc) 900 pF @ 13 V 48W (Tc) 8.7mOhms @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8726TRLPBF
INFINEON

17,470 20+  

预计 11个工作日

核友型号:st71361854

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8726TRLPBF
INFINEON

48  

预计 11个工作日

核友型号:st75141731

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8726TRPBF

IRLR8726TRPBF
INFINEON

5  

预计 11个工作日

核友型号:st75141732

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR8726TRPBF

IRLR8726TRPBF
INFINEON

RoHS
32,201 22/23+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st76429221

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订
海外位置

IRLR8726TRPBF

IRLR8726TRPBF
INFINEON

72,000 24+  

预计 16个工作日

核友型号:st49404822

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR8726TRPBF
INFINEON TECHNOLOGIES

24,175 N/A   MOQ : 2,000
SPQ : 2,000

预计 16个工作日

核友型号:st76681797

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8726TRPBF
INFINEON TECHNOLOGIES

2,000   MOQ : 2,000
SPQ : 1

预计 11个工作日

核友型号:st70647346

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 86A (Tc) 2150 pF @ 15 V 75W (Tc) 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8743TRPBF

IRLR8743TRPBF
INFINEON

4,000 20+  

预计 11个工作日

核友型号:st71361855

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 160A(Tc) 4880 pF @ 15 V 150°C (TJ) 3.1mOhms @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR8743TRPBF

IRLR8743TRPBF
INFINEON

RoHS
58,405 22+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st76431582

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 160A(Tc) 4880 pF @ 15 V 150°C (TJ) 3.1mOhms @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1
来自供应商的订

IRLR8743TRPBF

IRLR8743TRPBF
INFINEON

3,052 24+  

预计 16个工作日

核友型号:st76078926

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 160A(Tc) 4880 pF @ 15 V 150°C (TJ) 3.1mOhms @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2
来自供应商的订

IRLR9343TRPBF
INFINEON

RoHS
2,548 22+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st76439300

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 20A (Tc) 660 pF @ 50 V 79W (Tc) 105mOhms @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V -40°C ~ 175°C(TJ) Surface Mount PG-TO252-3
質量保證
B-1
来自供应商的订

IRLR9343TRPBF
INFINEON

14  

预计 11个工作日

核友型号:st75141734

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 20A (Tc) 660 pF @ 50 V 79W (Tc) 105mOhms @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V -40°C ~ 175°C(TJ) Surface Mount PG-TO252-3
質量保證
B-1
来自供应商的订

IRLR9343TRPBF
INFINEON

7,700 25+  

预计 16个工作日

核友型号:st76078927

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 20A (Tc) 660 pF @ 50 V 79W (Tc) 105mOhms @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V -40°C ~ 175°C(TJ) Surface Mount PG-TO252-3
質量保證
B-2
来自供应商的订

IRLR9343TRPBF
INFINEON TECHNOLOGIES

2,000 N/A   MOQ : 2,000
SPQ : 2,000

预计 16个工作日

核友型号:st76681798

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 4.5V, 10V 20A (Tc) 660 pF @ 50 V 79W (Tc) 105mOhms @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V -40°C ~ 175°C(TJ) Surface Mount PG-TO252-3
質量保證
B-1
来自供应商的订

IRLS3034PBF
INFINEON

8  

预计 11个工作日

核友型号:st75141735

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 195A(Tc) 10315 pF @ 25 V 375W(Tc) 1.7mOhms @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1
来自供应商的订

IRLS3034TRL7PP

IRLS3034TRL7PP
INFINEON

4  

预计 11个工作日

核友型号:st75141736

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 240A(Tc) 10990 pF @ 40 V 380W(Tc) 1.4mOhms @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V Surface Mount D2PAK(7-Lead)
質量保證
B-2
来自供应商的订

IRLS3034TRLPBF
INFINEON

RoHS
4,788 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号:st76525058

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 195A(Tc) 10315 pF @ 25 V 375W(Tc) 1.7mOhms @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2
来自供应商的订

IRLS3036TRL7PP

IRLS3036TRL7PP
INFINEON

RoHS
1,329 22/23+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号:st76518201

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 240A(Tc) 11270 pF @ 50 V 380W(Tc) 1.9mOhms @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK(7-Lead)
質量保證
B-1
来自供应商的订

IRLS3036TRLPBF

IRLS3036TRLPBF
INFINEON

2,400 24+  

预计 11个工作日

核友型号:st75021808

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 195A(Tc) 11210 pF @ 50 V 380W(Tc) 2.4mOhms @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2
来自供应商的订

IRLS3036TRLPBF

IRLS3036TRLPBF
INFINEON

RoHS
5,000 22+   MOQ : 500
SPQ : 1

预计 11个工作日

核友型号:st76497490

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 195A(Tc) 11210 pF @ 50 V 380W(Tc) 2.4mOhms @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1
来自供应商的订

IRLS3036TRLPBF

IRLS3036TRLPBF
INFINEON

2,019 23+  

预计 16个工作日

核友型号:st76078928

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 195A(Tc) 11210 pF @ 50 V 380W(Tc) 2.4mOhms @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1
来自供应商的订

IRLS4030TRL7PP
INFINEON

14  

预计 11个工作日

核友型号:st75141737

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 190A(Tc) 11490 pF @ 50 V -55°C ~ 150°C (TJ) 3.9mOhms @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK(7-Lead)
質量保證
B-1
来自供应商的订

IRLS4030TRLPBF

IRLS4030TRLPBF
INFINEON

6,015 24+  

预计 16个工作日

核友型号:st76078929

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4.5V, 10V 180A (Tc) 11360 pF @ 50 V -55°C ~ 150°C (TJ) 4.3mOhms @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1
来自供应商的订

IRLTS6342TRPBF

IRLTS6342TRPBF
INFINEON

118  

预计 11个工作日

核友型号:st75141738

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 8.3A(TA) 1010 pF @ 25 V 2W (Ta) 17.5mOhms @ 8.3A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount 6-TSOP
質量保證
B-2
来自供应商的订

IRLTS6342TRPBF

IRLTS6342TRPBF
INFINEON

RoHS
175 22+   MOQ : 175
SPQ : 1

预计 11个工作日

核友型号:st76375954

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 8.3A(TA) 1010 pF @ 25 V 2W (Ta) 17.5mOhms @ 8.3A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount 6-TSOP
質量保證
B-1
来自供应商的订

IRLTS6342TRPBF

IRLTS6342TRPBF
INFINEON

1,186 22+  

预计 16个工作日

核友型号:st76078930

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 8.3A(TA) 1010 pF @ 25 V 2W (Ta) 17.5mOhms @ 8.3A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount 6-TSOP
質量保證
B-2
来自供应商的订

IRLU024NPBF

IRLU024NPBF
INFINEON

RoHS
20,000 21+   MOQ : 3,000
SPQ : 1

预计 11个工作日

核友型号:st76375955

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK (TO-251AA)
質量保證
B-1
来自供应商的订

IRLU024NPBF

IRLU024NPBF
INFINEON

5,014 18+  

预计 11个工作日

核友型号:st71361856

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK (TO-251AA)
質量保證
B-1
来自供应商的订

IRLU024NPBF

IRLU024NPBF
INFINEON

14,400 22+  

预计 16个工作日

核友型号:st61363143

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK (TO-251AA)
質量保證
B-1
来自供应商的订

IRLU120NPBF

IRLU120NPBF
INFINEON

8  

预计 11个工作日

核友型号:st75141739

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK (TO-251AA)
質量保證
B-2
来自供应商的订

IRLU3410PBF

IRLU3410PBF
INFINEON

RoHS
3,000 22/25+   MOQ : 3,000
SPQ : 1

预计 11个工作日

核友型号:st76367820

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 17A (Tc) 800 pF @ 25 V 79W (Tc) 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK (TO-251AA)
質量保證
B-1
来自供应商的订

IRLU3636PBF

IRLU3636PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141740

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 60V 4.5V, 10V 50A (Tc) 3779 pF @ 50 V 143W(Tc) 6.8mOhms @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V -55°C ~ 175°C (TJ) Through Hole IPAK

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