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核友管理編號		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1 		來自供應商的訂

IRFB4227PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647291

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 65A(Tc) 4600 pF @ 25 V 330W(Tc) 24mOhms @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4227PBF
INFINEON

5,000 21+  

預計 11個工作天

核友型號：st71361780

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 65A(Tc) 4600 pF @ 25 V 330W(Tc) 24mOhms @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4227PBF
INFINEON

RoHS
2,000 22/26+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76394606

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 65A(Tc) 4600 pF @ 25 V 330W(Tc) 24mOhms @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4227PBF
INFINEON

61,111 26+  

預計 16個工作天

核友型號：st76078883

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 65A(Tc) 4600 pF @ 25 V 330W(Tc) 24mOhms @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4227PBF
INFINEON

50,000 23+  

預計 11個工作天

核友型號：st75027788

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 65A(Tc) 4600 pF @ 25 V 330W(Tc) 24mOhms @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4228PBF
INFINEON

10  

預計 11個工作天

核友型號：st75141340

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 83A(Tc) 4530 pF @ 25 V 330W(Tc) 15mOhms @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4229PBF
INFINEON TECHNOLOGIES

2,000 N/A   MOQ : 300
SPQ : 150

預計 16個工作天

核友型號：st76681710

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 46A(Tc) 4560 pF @ 25 V 330W(Tc) 46mOhms @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4229PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647292

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 46A(Tc) 4560 pF @ 25 V 330W(Tc) 46mOhms @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4229PBF
INFINEON

RoHS
5,000 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76457733

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 46A(Tc) 4560 pF @ 25 V 330W(Tc) 46mOhms @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4229PBF
INFINEON

6,970 21+  

預計 11個工作天

核友型號：st71361781

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 46A(Tc) 4560 pF @ 25 V 330W(Tc) 46mOhms @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4229PBF
INFINEON

6  

預計 11個工作天

核友型號：st75141341

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 46A(Tc) 4560 pF @ 25 V 330W(Tc) 46mOhms @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB42N20DPBF
INFINEON

2,404 16+  

預計 11個工作天

核友型號：st71361782

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10 V 44A (Tc) 3430 pF @ 25 V 2.4W(Ta), 330W(Tc) 55mOhms @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4310PBF
INFINEON

1,000 21+  

預計 11個工作天

核友型號：st71361783

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 130A(Tc) 7670 pF @ 50 V 300W(Tc) 7mOhms @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4310PBF
INFINEON

10  

預計 11個工作天

核友型號：st75141342

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 130A(Tc) 7670 pF @ 50 V 300W(Tc) 7mOhms @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4310PBF
INFINEON

RoHS
2,000 22/23+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76448480

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 130A(Tc) 7670 pF @ 50 V 300W(Tc) 7mOhms @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4310PBF
INFINEON TECHNOLOGIES

200 N/A   MOQ : 200
SPQ : 100

預計 16個工作天

核友型號：st76681711

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 130A(Tc) 7670 pF @ 50 V 300W(Tc) 7mOhms @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4310ZPBF
INFINEON TECHNOLOGIES

3,000 N/A   MOQ : 300
SPQ : 150

預計 16個工作天

核友型號：st76681712

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 120A (Tc) 6860 pF @ 50 V 250W(Tc) 6mOhms @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4310ZPBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647293

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 120A (Tc) 6860 pF @ 50 V 250W(Tc) 6mOhms @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4310ZPBF

IRFB4310ZPBF
INFINEON

5,000 21+  

預計 11個工作天

核友型號：st71361784

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 120A (Tc) 6860 pF @ 50 V 250W(Tc) 6mOhms @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4310ZPBF

IRFB4310ZPBF
INFINEON

1  

預計 11個工作天

核友型號：st75141343

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 120A (Tc) 6860 pF @ 50 V 250W(Tc) 6mOhms @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4321PBF

IRFB4321PBF
INFINEON

10  

預計 11個工作天

核友型號：st75141344

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 85A(Tc) 4460 pF @ 50 V 350W(Tc) 15mOhms @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4321PBF
INFINEON TECHNOLOGIES

8,000 N/A   MOQ : 1,000
SPQ : 1,000

預計 16個工作天

核友型號：st76681713

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 85A(Tc) 4460 pF @ 50 V 350W(Tc) 15mOhms @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4321PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647294

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 85A(Tc) 4460 pF @ 50 V 350W(Tc) 15mOhms @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4332PBF
INFINEON

RoHS
1,000 22/23+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76426620

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10 V 60A (Tc) 5860 pF @ 25 V 390W(Tc) 33mOhms @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V -40°C ~ 175°C(TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4410
INFINEON

50 21+  

預計 11個工作天

核友型號：st75025803

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 96A(Tc) 5150 pF @ 50 V 250W(Tc) 10mOhms @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4410PBF

IRFB4410PBF
INFINEON

3,475 22+  

預計 16個工作天

核友型號：st76078884

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 88A(Tc) 5150 pF @ 50 V 200W(Tc) 10mOhms @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4410PBF

IRFB4410PBF
INFINEON

RoHS
1,571 11+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76488671

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 88A(Tc) 5150 pF @ 50 V 200W(Tc) 10mOhms @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4410ZPBF

IRFB4410ZPBF
INFINEON

887 18+  

預計 4個工作天

核友型號：st74840142

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 97A(Tc) 4820 pF @ 50 V 230W(Tc) 9mOhms @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4410ZPBF

IRFB4410ZPBF
INFINEON

10  

預計 11個工作天

核友型號：st75141345

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 97A(Tc) 4820 pF @ 50 V 230W(Tc) 9mOhms @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4410ZPBF

IRFB4410ZPBF
INFINEON

RoHS
1,000 21+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76400943

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 97A(Tc) 4820 pF @ 50 V 230W(Tc) 9mOhms @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4410ZPBF
INFINEON TECHNOLOGIES

5,000 N/A   MOQ : 1,000
SPQ : 1,000

預計 16個工作天

核友型號：st76681714

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 97A(Tc) 4820 pF @ 50 V 230W(Tc) 9mOhms @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4410ZPBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647295

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 97A(Tc) 4820 pF @ 50 V 230W(Tc) 9mOhms @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4510PBF

IRFB4510PBF
INFINEON

23  

預計 11個工作天

核友型號：st75141346

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 62A(Tc) 3180 pF @ 50 V 140W (Tc) 13.5mOhms @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4610PBF

IRFB4610PBF
INFINEON

8  

預計 11個工作天

核友型號：st75141347

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 73A(Tc) 3550 pF @ 50 V 190W(Tc) 14mOhms @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4615PBF
INFINEON

30  

預計 11個工作天

核友型號：st75141348

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB4710PBF

IRFB4710PBF
INFINEON

RoHS
6,000 22/23+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76462995

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 75A(Tc) 6160 pF @ 25 V 3.8W(Ta), 200W(Tc) 14mOhms @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB4710PBF

IRFB4710PBF
INFINEON

59  

預計 11個工作天

核友型號：st75141349

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 75A(Tc) 6160 pF @ 25 V 3.8W(Ta), 200W(Tc) 14mOhms @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂
海外位置

IRFB4710PBF

IRFB4710PBF
INFINEON

2,500 23+  

預計 16個工作天

核友型號：st49404514

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10 V 75A(Tc) 6160 pF @ 25 V 3.8W(Ta), 200W(Tc) 14mOhms @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB52N15DPBF
INFINEON TECHNOLOGIES

4,000 N/A   MOQ : 1,000
SPQ : 1,000

預計 16個工作天

核友型號：st76681715

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10 V 51A (Tc) 2770 pF @ 25 V 3.8W(Ta), 230W(Tc) 32mOhms @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB5615PBF

IRFB5615PBF
INFINEON

RoHS
10,000 21+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76416738

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB5615PBF

IRFB5615PBF
INFINEON

26  

預計 11個工作天

核友型號：st75141350

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂
海外位置

IRFB5615PBF

IRFB5615PBF
INFINEON

4,570 22+  

預計 16個工作天

核友型號：st49404516

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB5615PBF
INFINEON TECHNOLOGIES

128,000 N/A   MOQ : 1,000
SPQ : 1,000

預計 16個工作天

核友型號：st76681716

Infineon Technologies N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB5615PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st70647296

Infineon Technologies N-Channel MOSFET (Metal Oxide) 150V 10 V 35A (Tc) 1750 pF @ 50 V 144W(Tc) 39mOhms @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB5620PBF

IRFB5620PBF
INFINEON

RoHS
99,000 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76408001

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 200V 10 V 25A (Tc) 1710 pF @ 50 V 144W(Tc) 72.5mOhms @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB5620PBF

IRFB5620PBF
INFINEON

3,600 23+  

預計 11個工作天

核友型號：st75019320

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 200V 10 V 25A (Tc) 1710 pF @ 50 V 144W(Tc) 72.5mOhms @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB5620PBF

IRFB5620PBF
INFINEON

188  

預計 11個工作天

核友型號：st75141351

Infineon Technologies Trench Mosfet N-Channel MOSFET (Metal Oxide) 200V 10 V 25A (Tc) 1710 pF @ 50 V 144W(Tc) 72.5mOhms @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRFB7430PBF

IRFB7430PBF
INFINEON

19  

預計 11個工作天

核友型號：st75141352

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 375W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂
海外位置

IRFB7430PBF

IRFB7430PBF
INFINEON

30,000 22+  

預計 16個工作天

核友型號：st49404517

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 375W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRFB7430PBF
INFINEON TECHNOLOGIES

3,800 N/A   MOQ : 150
SPQ : 150

預計 16個工作天

核友型號：st76681717

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 375W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB

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