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核友型号		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1 		来自供应商的订
2  

预计 11个工作日

核友型号：st75140093

Infineon Technologies CoolSIC™ M1 N-Channel SiCFET (Silicon Carbide) 650V Through Hole 28A (Tc) 624 pF @ 400 V 126W(Tc) 111mOhms @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +23V, -5V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7-12
質量保證
B-2 		来自供应商的订
RoHS
585 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76588356

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-2 		来自供应商的订
RoHS
767 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76570947

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-2 		来自供应商的订
RoHS
391 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76567149

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-1 		来自供应商的订

IMT65R057M1H
INFINEON

100 23+  

预计 11个工作日

核友型号：st75028506

Infineon Technologies Industrial
質量保證
B-2 		来自供应商的订
RoHS
607 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76562737

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-2 		来自供应商的订
RoHS
2,172 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76559314

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-2 		来自供应商的订
RoHS
1,934 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76554444

Infineon Technologies CoolSiC™ SiCFET (Silicon Carbide) 650V Through Hole Surface Mount PG-HSOF-8-2
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140125

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 127A(Tc) 4580 pF @ 800 V 455W(Tc) 18.4mOhms @ 54.3A, 18V 5.2V @ 23.4mA 145 nC @ 18 V +20V, -5V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3
質量保證
B-1 		来自供应商的订

IMW120R045M1
INFINEON

240 23+  

预计 11个工作日

核友型号：st75028848

Infineon Technologies Industrial
質量保證
B-2 		来自供应商的订

IMW120R060M1H
INFINEON

RoHS
30 20+   MOQ : 30
SPQ : 1

预计 11个工作日

核友型号：st76559421

Infineon Technologies Industrial
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140126

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 13A (Tc) 289 pF @ 800 V 75W (Tc) 286mOhms @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-2 		来自供应商的订
RoHS
1,435 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76609001

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V 15V, 20V 171A(Tc) 6359 pF @ 400 V 625W(Tc) 6.1mOhms @ 146.3A, 20V 5.6V @ 29.7mA 179 nC @ 18 V +23V, -7V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3-U06
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140127

Infineon Technologies CoolSIC™ M1 N-Channel SiCFET (Silicon Carbide) 650V Through Hole 47A (Tc) 2131 pF @ 400 V 150°C (TJ) 34mOhms @ 38.3A, 18V 5.7V @ 11mA 62 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140128

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 46A(Tc) 1393 pF @ 400 V 176W(Tc) 50mOhms @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140129

Infineon Technologies CoolSIC™ M1 N-Channel SiCFET (Silicon Carbide) 650V Through Hole 39A (Tc) 1118 pF @ 400 V 125W (Tc) 64mOhms @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140130

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 35A (Tc) 930 pF @ 400 V 133W(Tc) 74mOhms @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140131

Infineon Technologies CoolSIC™ M1 N-Channel SiCFET (Silicon Carbide) 650V Through Hole 26A (Tc) 744 pF @ 400 V 150°C (TJ) 94mOhms @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-1 		来自供应商的订
38  

预计 11个工作日

核友型号：st75140132

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 20A (Tc) 496 pF @ 400 V 75W (Tc) 142mOhms @ 8.9A, 18V 5.7V @ 3mA 15 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-2 		来自供应商的订

IMZ120R030M1H
INFINEON

RoHS
2,880 22/23+   MOQ : 240
SPQ : 1

预计 11个工作日

核友型号：st76583617

Infineon Technologies Industrial
質量保證
B-2 		来自供应商的订

IMZ120R090M1H
INFINEON

RoHS
20,308 21+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76559422

Infineon Technologies Industrial
質量保證
B-1 		来自供应商的订
2  

预计 11个工作日

核友型号：st75140139

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 26A (Tc) 707 pF @ 800 V 115W(Tc) 117mOhms @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-1
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140140

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 19A (Tc) 454 pF @ 800 V 150°C (TJ) 182mOhms @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-1
質量保證
B-1 		来自供应商的订
2  

预计 11个工作日

核友型号：st75140141

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 4.7A (Tc) 182 pF @ 800 V 150°C (TJ) 350mOhms @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-1
質量保證
B-1 		来自供应商的订
3  

预计 11个工作日

核友型号：st75140144

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 1200V 15V, 18V 225A(Tc) 9170 pF @ 800 V 750W(Tc) 9.9mOhms @ 108A, 18V 5.2V @ 47mA 289 nC @ 18 V +20V, -5V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-8
質量保證
B-1 		来自供应商的订

IMZA120R030M1H
INFINEON

1  

预计 11个工作日

核友型号：st75140145

Infineon Technologies Industrial
質量保證
B-1 		来自供应商的订
2  

预计 11个工作日

核友型号：st75140146

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 59A(Tc) 2131 pF @ 400 V 150°C (TJ) 34mOhms @ 38.3A, 18V 5.7V @ 11mA 63 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-4-3
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140147

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 53A(Tc) 1643 pF @ 400 V 197W(Tc) 42mOhms @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-3
質量保證
B-1 		来自供应商的订
30  

预计 11个工作日

核友型号：st75140148

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 39A (Tc) 1118 pF @ 400 V 125W (Tc) 64mOhms @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-4-3
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140149

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 35A (Tc) 930 pF @ 400 V 133W(Tc) 74mOhms @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-3
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140150

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 650V Through Hole 26A (Tc) 624 pF @ 400 V 104W (Tc) 111mOhms @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-3
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140151

Infineon Technologies CoolSIC™ M1 N-Channel SiCFET (Silicon Carbide) 650V Through Hole 20A (Tc) 496 pF @ 400 V 75W (Tc) 142mOhms @ 8.9A, 18V 5.7V @ 3mA 15 nC @ 18 V +23V, -5V -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-41
質量保證
B-2 		来自供应商的订
RoHS
328 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76612902

Infineon Technologies CoolSiC™ N-Channel SiCFET (Silicon Carbide) 750V 15V, 20V 163A(Tc) 6137 pF @ 500 V 517W(Tc) 7.2mOhms @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 500 V +23V, -5V -55°C ~ 175°C (TJ) Through Hole PG-TO247-4-U02
質量保證
B-1 		来自供应商的订
15  

预计 11个工作日

核友型号：st75140236

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 40V 10 V 89A(Tc) 9500 pF @ 20 V 38W (Tc) 2.8mOhms @ 89A, 10V 4V @ 95µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-1 		来自供应商的订

IPA028N08N3GXKSA1
2  

预计 11个工作日

核友型号：st75140237

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 80V 6V, 10V 89A(Tc) 14200 pF @ 40 V 42W (Tc) 2.8mOhms @ 89A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-1 		来自供应商的订

IPA032N06N3 G
INFINEON TECHNOLOGIES

500   MOQ : 500
SPQ : 1

预计 11个工作日

核友型号：st70647204

Infineon Technologies
質量保證
B-1 		来自供应商的订

IPA032N06N3 G
INFINEON

10  

预计 11个工作日

核友型号：st75140238

Infineon Technologies N-Channel 60V 3.2 mOhms TO220-3
質量保證
B-1 		来自供应商的订

IPA037N08N3GXKSA1
7,500  

预计 5个工作日

核友型号：st72232716

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 80V 6V, 10V 75A(Tc) 8110 pF @ 40 V 41W(Tc) 3.7mOhms @ 75A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-1 		来自供应商的订
60  

预计 11个工作日

核友型号：st75140239

Infineon Technologies OptiMOS™ 5 N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 72A(Tc) 3500 pF @ 30 V 150°C (TJ) 4mOhms @ 72A, 10V 3.3V @ 50µA 50 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220 Full Package
質量保證
B-1 		来自供应商的订
20  

预计 11个工作日

核友型号：st75140240

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 80V 6V, 10V 75A(Tc) 6400 pF @ 40 V 39W(Tc) 4mOhms @ 38A, 10V 3.8V @ 109µA 93 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140241

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 40V 10 V 70A (Tc) 4500 pF @ 20 V 35W(Tc) 4.1mOhms @ 70A, 10V 4V @ 45µA 56 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-2 		来自供应商的订

IPA045N10N3G
INFINEON

RoHS
5,000 21+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号：st76514694

Infineon Technologies N-Channel 100V 64A 4.5 mOhms @ 10V 2.7V -55.0°C ~ 175.0°C Industrial Through Hole TO-220 FullPAK
質量保證
B-2 		来自供应商的订

IPA050N10NM5S
INFINEON

RoHS
9,230 22+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号：st76457202

Infineon Technologies 66A 5 mOhms @ 10V 3V -55.0°C ~ 175.0°C Standard TO-220 FullPAK
質量保證
B-2 		来自供应商的订
RoHS
1,750 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76525578

Infineon Technologies OptiMOS™ 5 N-Channel MOSFET (Metal Oxide) 100V 6V, 10V 66A(Tc) 4700 pF @ 50 V 38W (Tc) 5mOhms @ 33A, 10V 3.8V @ 84µA 68 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220 Full Package
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140242

Infineon Technologies OptiMOS™ 5 N-Channel MOSFET (Metal Oxide) 100V 6V, 10V 66A(Tc) 4700 pF @ 50 V 38W (Tc) 5mOhms @ 33A, 10V 3.8V @ 84µA 68 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220 Full Package
質量保證
 来自供应商的订

IPA057N06N3G
INFINEON

1,000 2025+  

预计 16个工作日

核友型号：st60357928

Infineon Technologies N-Channel 60V 5.7 mOhms Through Hole TO220-3
質量保證
B-1 		来自供应商的订

IPA057N06N3GXKSA1
60  

预计 11个工作日

核友型号：st75140243

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 60V 10 V 60A (Tc) 6600 pF @ 30 V 38W (Tc) 5.7mOhms @ 60A, 10V 4V @ 58µA 82 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-3-31
質量保證
B-1 		来自供应商的订
62  

预计 11个工作日

核友型号：st75140244

Infineon Technologies OptiMOS™ 5 N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 56A (Tc) 2600 pF @ 30 V 33W (Tc) 6mOhms @ 56A, 10V 3.3V @ 36µA 36 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220 Full Package
質量保證
B-1 		来自供应商的订
323  

预计 11个工作日

核友型号：st75140245

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 45A (Tc) 2500 pF @ 30 V 33W (Tc) 6mOhms @ 45A, 10V 3.3V @ 36µA 32 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO220-FP
質量保證
B-2 		来自供应商的订

IPA082N10NF2S
INFINEON

RoHS
500 21+   MOQ : 500
SPQ : 1

预计 11个工作日

核友型号：st76461833

Infineon Technologies 46A 8.2 mOhms @ 10V 3V -55.0°C ~ 175.0°C Standard TO-220 FullPAK

Recommended Rectifiers - FETs